No. | parte # | Fabricante | Descripción | Hoja de Datos |
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NXP Semiconductors |
N-Channel MOSFET s Low thermal resistance s Low gate drive current s SO8 equivalent area footprint s Low on-state resistance. 1.3 Applications s DC-to-DC converters s Switched-mode power supplies 1.4 Quick reference data s VDS ≤ 100 V s Ptot ≤ 62.5 W s ID ≤ 34.3 A |
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NXP Semiconductors |
N-channel TrenchMOS ultra low level FET and benefits Higher operating power due to low thermal resistance Interfaces directly with low voltage gate drivers Low conduction losses due to low on-state resistance 1.3 Applications DC-to-DC convertors Notebook computers Portable equ |
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NXP Semiconductors |
N-channel TrenchMOS ultra low level FET I Logic level threshold I Optimized for use in DC-to-DC converters I 100 % RG tested I Lead-free package I Very low switching and conduction losses 1.3 Applications I DC-to-DC converters I Voltage regulators I Switched-mode power supplies I PC Mothe |
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NXP Semiconductors |
N-Channel MOSFET and benefits High efficiency due to low switching and conduction losses Suitable for logic level gate drive sources 1.3 Applications Consumer applications Desktop Voltage Regulator Module (VRM) Notebook Voltage Regulator Module (VRM) 1. |
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