| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
NXP Semiconductors |
Low capacitance unidirectional ESD protection diodes I Unidirectional ESD protection of up to two lines I Low diode capacitance: Cd = 34 pF I Max. peak pulse power: PPP = 70 W I Low clamping voltage: VCL = 13 V I Ultra low leakage current I ESD protection up to 30 kV I IEC 61000-4-2; level 4 (ESD) I IE |
|
|
|
|
NXP Semiconductors |
Very low capacitance bidirectional ESD protection diodes I I I I I Bidirectional ESD protection of one line Very low diode capacitance: Cd = 11 pF Max. peak pulse power: PPP = 45 W Low clamping voltage: VCL = 12.5 V Ultra low leakage current: IRM < 1 nA I I I I ESD protection up to 30 kV IEC 61000-4-2; lev |
|
|
|
|
NXP Semiconductors |
Very low capacitance bidirectional ESD protection diodes I I I I I Bidirectional ESD protection of one line Very low diode capacitance: Cd = 11 pF Max. peak pulse power: PPP = 45 W Low clamping voltage: VCL = 12.5 V Ultra low leakage current: IRM < 1 nA I I I I ESD protection up to 30 kV IEC 61000-4-2; lev |
|
|
|
|
NXP Semiconductors |
Very low capacitance bidirectional ESD protection diodes I I I I I Bidirectional ESD protection of one line Very low diode capacitance: Cd = 11 pF Max. peak pulse power: PPP = 45 W Low clamping voltage: VCL = 12.5 V Ultra low leakage current: IRM < 1 nA I I I I ESD protection up to 30 kV IEC 61000-4-2; lev |
|
|
|
|
NXP Semiconductors |
Low capacitance unidirectional ESD protection diode and benefits ESD protection of one line Ultra small SMD plastic package Solderable side pads Package height typ. 0.37 mm Low diode capacitance Cd = 25 pF AEC-Q101 qualified ESD protection up to 26 kV IEC 61000-4-2; level 4 (ESD) I |
|
|
|
|
NXP Semiconductors |
Low capacitance unidirectional ESD protection diodes I Unidirectional ESD protection of up to two lines I Low diode capacitance: Cd = 34 pF I Max. peak pulse power: PPP = 70 W I Low clamping voltage: VCL = 13 V I Ultra low leakage current I ESD protection up to 30 kV I IEC 61000-4-2; level 4 (ESD) I IE |
|
|
|
|
NXP Semiconductors |
Very low capacitance unidirectional quadruple ESD protection diode arrays I I I I ESD protection of up to four lines Very low diode capacitance Max. peak pulse power: PPP = 16 W Low clamping voltage: VCL = 11 V I I I I Ultra low leakage current: IRM = 25 nA ESD protection up to 12 kV IEC 61000-4-2; level 4 (ESD) IEC 61000- |
|
|
|
|
NXP Semiconductors |
Very low capacitance unidirectional quadruple ESD protection diode arrays I I I I ESD protection of up to four lines Very low diode capacitance Max. peak pulse power: PPP = 16 W Low clamping voltage: VCL = 11 V I I I I Ultra low leakage current: IRM = 25 nA ESD protection up to 12 kV IEC 61000-4-2; level 4 (ESD) IEC 61000- |
|
|
|
|
NXP Semiconductors |
Very low capacitance unidirectional quadruple ESD protection diode arrays I I I I ESD protection of up to four lines Very low diode capacitance Max. peak pulse power: PPP = 16 W Low clamping voltage: VCL = 11 V I I I I Ultra low leakage current: IRM = 25 nA ESD protection up to 12 kV IEC 61000-4-2; level 4 (ESD) IEC 61000- |
|
|
|
|
NXP Semiconductors |
Femtofarad bidirectional ESD protection diode I Bidirectional ESD protection of one line I ESD protection up to 10 kV I Femtofarad capacitance: Cd = 400 fF I IEC 61000-4-2; level 4 (ESD) I Low ESD clamping voltage: 30 V I AEC-Q101 qualified at 30 ns and ± 8 kV I Very low leakage current: IRM < 1 |
|
|
|
|
NXP Semiconductors |
LIN bus ESD protection diode I ESD protection of one automotive LIN bus line I Asymmetrical diode configuration ensures an optimized ElectroMagnetic Immunity (EMI) of a LIN Electronic Control Unit (ECU) I Due to the integrated diode structure only one very small SOD323 package is |
|
|
|
|
NXP Semiconductors |
Double ESD protection diodes |
|
|
|
|
NXP Semiconductors |
Ultra low profile bidirectional very low capacitance ESD protection diode and benefits Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen and antimony (Dark Green compliant) Bidirectional ESD protection of one line Very low diode capacitance Cd = 3.5 pF ESD protection up to ±15 kV acc |
|
|
|
|
NXP Semiconductors |
Ultra low profile bidirectional low capacitance and benefits Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen and antimony (Dark Green compliant) Bidirectional ESD protection of one line Low diode capacitance Cd = 12 pF ESD protection up to ±30 kV according |
|
|
|
|
NXP Semiconductors |
Ultra low profile bidirectional low capacitance ESD protection diode and benefits Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen and antimony (Dark Green compliant) Bidirectional ESD protection of one line Low diode capacitance Cd = 35 pF ESD protection up to 30 kV according |
|
|
|
|
NXP Semiconductors |
Ultra low capacitance bidirectional ESD protection diodes I Bidirectional ESD protection of one line I ESD protection up to 9 kV I Ultra low diode capacitance: Cd = 0.9 pF I IEC 61000-4-2; level 4 (ESD) I Very low leakage current: IRM = 1 nA I AEC-Q101 qualified 1.3 Applications I I I I I I www.DataSheet4U. |
|
|
|
|
NXP Semiconductors |
Ultra low capacitance bidirectional ESD protection diodes I Bidirectional ESD protection of one line I ESD protection up to 9 kV I Ultra low diode capacitance: Cd = 0.9 pF I IEC 61000-4-2; level 4 (ESD) I Very low leakage current: IRM = 1 nA I AEC-Q101 qualified 1.3 Applications I I I I I I www.DataSheet4U. |
|
|
|
|
NXP Semiconductors |
Ultra low capacitance bidirectional ESD protection diodes I Bidirectional ESD protection of one line I ESD protection up to 9 kV I Unidirectional ESD protection of up to I IEC 61000-4-2; level 4 (ESD) two lines I Ultra low diode capacitance: Cd = 0.9 pF I AEC-Q101 qualified I Very low leakage current: IRM = |
|
|
|
|
NXP Semiconductors |
Ultra low capacitance bidirectional ESD protection diodes I Bidirectional ESD protection of one line I ESD protection up to 9 kV I Unidirectional ESD protection of up to I IEC 61000-4-2; level 4 (ESD) two lines I Ultra low diode capacitance: Cd = 0.9 pF I AEC-Q101 qualified I Very low leakage current: IRM = |
|
|
|
|
NXP Semiconductors |
Ultra low capacitance unidirectional ESD protection diode and benefits ESD protection of one line Ultra low diode capacitance Cd = 1.55 pF Ultra small SMD plastic package Solderable side pads Package height typ. 0.37 mm Ultra low leakage current: IRM = 1 nA ESD protection up to 15 kV IEC 610 |
|
Desde 2024. D4U Semiconductor.
|