| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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NXP Semiconductors |
3.8A NPN low VCEsat (BISS) transistor Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed- |
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NXP Semiconductors |
2.7A PNP low VCEsat (BISS) transistor and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller requ |
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NXP Semiconductors |
2.4A PNP low VCEsat (BISS) transistor Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Sma |
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NXP Semiconductors |
PNP Transistor • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit board requirements • Cost effective alternative to MOSFETS in specific app |
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NXP Semiconductors |
40V 5A NPN low VCEsat (BISS) transistor • High hFE and low VCEsat at high current operation • High collector current capability: IC maximum 4 A • High efficiency leading to less heat generation. APPLICATIONS • Medium power peripheral drivers (e.g. fan and motor) • Strobe flash units for DS |
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NXP Semiconductors |
20V 5A PNP low VCEsat (BISS) transistor • High hFE and low VCEsat at high current operation • High collector current IC: 5 A • High efficiency leading to less heat generation. APPLICATIONS • Medium power peripheral drivers (e.g. fans and motors) • Strobe flash units for digital still camer |
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NXP Semiconductors |
30V NPN/PNP low VCEsat (BISS) transistor and benefits Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required P |
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NXP Semiconductors |
NPN transistor • Low collector-emitter saturation voltage • High current capabilities. • Improved device reliability due to reduced heat generation. • Enhanced performance over SOT231A general purpose packaged transistors. APPLICATIONS • General purpose switching |
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NXP Semiconductors |
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for |
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NXP Semiconductors |
60V 1A PNP/PNP low VCEsat (BISS) transistor I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for |
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NXP Semiconductors |
60V 1A PNP low VCEsat (BISS) transistor I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for |
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NXP Semiconductors |
PNP Transistor Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency due to less heat generation Reduces Printed-Circuit Board (PCB) area required Cost-effective replacement for medium power transisto |
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NXP Semiconductors |
60V 1A PNP low VCEsat (BISS) transistor I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for |
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NXP Semiconductors |
20V 5A NPN low VCEsat (BISS) transistor • High hFE and low VCEsat at high current operation • High collector current capability: IC maximum 5 A • Higher efficiency leading to less heat generation. APPLICATIONS • Medium power peripheral drivers, e.g. fans and motors • Strobe flash units for |
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NXP Semiconductors |
60V 1A PNP low VCEsat (BISS) transistor I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for |
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NXP Semiconductors |
40V 5A PNP low VCEsat (BISS) transistor • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • High efficiency leading to less heat generation. APPLICATIONS • Supply line switching circuits • Battery management applications • DC/DC converter app |
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NXP Semiconductors |
1A PNP low VCEsat (BISS) transistor Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for |
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NXP Semiconductors |
3.5A NPN low VCEsat (BISS) transistor Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Sma |
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NXP Semiconductors |
2.6A NPN low VCEsat (BISS) transistor Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Sma |
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NXP Semiconductors |
2.7A PNP low VCEsat (BISS) transistor Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Sma |
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Desde 2024. D4U Semiconductor.
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