NXP Semiconductors BGA Hoja de datos

No.	parte #	Fabricante	Descripción
1	BGA2801	NXP Semiconductors	MMIC wideband amplifier and benefits  Internally matched to 50   A gain of 22.2 dB at 250 MHz increasing to 23.0 dB at 2150 MHz  Output power at 1 dB gain compression = 2 dBm  Supply current = 14.3 mA at a supply voltage of 3.3 V  Reverse isolation > 29 dB up to 2 GHz
2	BGA7027	NXP Semiconductors	high linearity silicon amplifier and benefits  400 MHz to 2700 MHz frequency operating range  11 dB small signal gain at 2 GHz  28 dBm output power at 1 dB gain compression  Integrated active biasing  External matching allows broad application optimization of the electrical per
3	BGA2870	NXP Semiconductors	MMIC wideband amplifier and benefits  Internally matched to 50   A gain of 31.1 dB at 500 MHz  Output power at 1 dB gain compression = 4 dBm  Supply current = 16.0 mA at a supply voltage of 2.5 V  Reverse isolation > 52 dB up to 750 MHz  Good linearity with low secon
4	BGA2850	NXP Semiconductors	MMIC wideband amplifier and benefits  Internally matched to 50   A gain of 24 dB at 950 MHz  Output power at 1 dB gain compression = 1 dBm  Supply current = 9.1 mA at a supply voltage of 5 V  Reverse isolation > 30 dB up to 2 GHz  Good linearity with low second orde
5	BGA3012	NXP Semiconductors	1GHz 12dB gain wideband amplifier MMIC and benefits  Internally biased  Flat gain  High linearity with an IP3O of 40 dBm and an IP2O of 60 dBm  Noise figure of 3.1 dB  75  input and output impedance  Operating from 5 V to 8 V supply 1.3 Applications  General wideband amplifiers.