NXP Semiconductors BFU Hoja de datos

No.	parte #	Fabricante	Descripción
1	BFU725F	NXP Semiconductors	NPN wideband silicon germanium RF transistor and benefits  Low noise high gain microwave transistor  Noise figure (NF) = 0.7 dB at 5.8 GHz  High maximum stable gain 27 dB at 1.8 GHz  110 GHz fT silicon germanium technology 1.3 Applications  2nd LNA stage and mixer stage in DBS LNB’s  Sate
2	BFU690F	NXP Semiconductors	NPN wideband silicon RF transistor and benefits  Low noise high linearity microwave transistor  High output third-order intercept point 34 dBm at 1.8 GHz  40 GHz fT silicon technology 1.3 Applications     Ka band oscillators DRO’s C-band high output buffer amplifier ZigBee LTE
3	BFU760F	NXP Semiconductors	wideband silicon germanium RF transistor and benefits Low noise high linearity RF transistor High maximum output third-order intercept point 32 dBm at 1.8 GHz 110 GHz fT silicon germanium technology 1.3 Applications www.DataSheet4U.net Ka band oscillators DRO’s High
4	BFU660F	NXP Semiconductors	NPN wideband silicon RF transistor and benefits Low noise high linearity RF transistor High output third-order intercept point 27 dBm at 1.8 GHz 40 GHz fT silicon technology 1.3 Applications Analog/digital cordless applications X-band high output buffer amplifier ZigBee
5	BFU730F	NXP Semiconductors	wideband silicon germanium RF transistor and benefits Low noise high gain microwave transistor Noise figure (NF) = 0.8 dB at 5.8 GHz High maximum power gain 18.5 dB at 5.8 GHz 110 GHz fT silicon germanium technology 1.3 Applications 2nd LNA stage and m
6	BFU630F	NXP Semiconductors	NPN wideband silicon RF transistor
7	BFU710F	NXP Semiconductors	NPN wideband silicon germanium RF transistor and benefits Low noise high gain microwave transistor Noise figure (NF) = 1.45 dB at 12 GHz High maximum power gain 14 dB at 12 GHz 110 GHz fT silicon germanium technology 1.3 Applications 2nd LNA stage and mixer stage in DBS LNB’s Low no