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NXP Semiconductors BAS DataSheet

No. parte # Fabricante Descripción Hoja de Datos
1
BAS16J

NXP Semiconductors
High-speed switching diodes
and benefits
 High switching speed: trr  4 ns
 Low leakage current
 Repetitive peak reverse voltage: VRRM  100 V
 AEC-Q101 qualified
 Low ca
Datasheet
2
BAS21J

NXP Semiconductors
Single high-speed switching diode
I High switching speed: trr ≤ 50 ns I Low leakage current I Repetitive peak reverse voltage: VRRM ≤ 300 V I Excellent coplanarity and improved thermal behavior I Low capacitance: Cd ≤ 2 pF I Reverse voltage: VR ≤ 300 V I Very small and flat lead SMD p
Datasheet
3
BAS716

NXP Semiconductors
Low-leakage diode

• Plastic SMD package
• Low leakage current: typ. 0.2 nA
• Switching time: typ. 0.6 µs
• Continuous reverse voltage: max. 75 V
• Repetitive peak reverse voltage: max. 85 V www.DataSheet4U.com BAS716 PINNING
• Repetitive peak forward current: max. 5
Datasheet
4
UJA1076

NXP Semiconductors
High-speed CAN Core System Basis Chip
2.1 General „ Contains a full set of CAN ECU functions: ‹ CAN transceiver ‹ Scalable 3.3 V or 5 V voltage regulator delivering up to 250 mA for a microcontroller and peripheral circuitry; an external PNP transistor can be connected for better heat di
Datasheet
5
BAS521

NXP Semiconductors
High voltage switching diode

• High switching speed: max. 50 ns
• High continuous reverse voltage: 300 V
• Repetitive peak forward current: 625 mA
• Ultra small plastic SMD package. APPLICATIONS
• High speed switching
• High voltage switching. DESCRIPTION The BAS521 is a high-vo
Datasheet
6
BAS21VD

NXP Semiconductors
High-voltage switching diode array
and benefits
• High switching speed: trr ≤ 50 ns
• Low capacitance: Cd ≤ 5 pF
• Reverse voltage: VR ≤ 200 V
• AEC-Q101 qualified
• Repetitive peak reverse voltage: VRRM ≤ 250 V
• Repetitive peak forward current: IFRM ≤ 1 A
• Small SMD plastic package
Datasheet
7
PCF87852

NXP Semiconductors
Bluetooth baseband controller
2.1 Baseband hardware s s s s s s Embedded ARM7TDMI microprocessor 224 kbytes ROM memory 38 kbytes SRAM memory 8 kbytes internal data RAM (IRAM) for Bluetooth controller Watchdog timer Two 32-bit system timers Philips Semiconductors PCF87852 Blueto
Datasheet
8
UJA1079

NXP Semiconductors
LIN core system basis chip
and benefits 2.1 General „ Contains LIN ECU functions: ‹ LIN transceiver ‹ Scalable 3.3 V or 5 V voltage regulator delivering up to 250 mA for a microcontroller and peripheral circuitry; an external PNP transistor can be connected for better heat dis
Datasheet
9
LPC1100

NXP Semiconductors
Cortex-M0 based microcontrollers
} ARM Cortex-M0 processor - 50 MHz operation -N  ested Vectored Interrupt Controller for fast deterministic interrupts -W  akeup Interrupt Controller allows automatic wake from a priority interrupt -T  hree reduced-power modes: Sleep, Deep-sleep,
Datasheet



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