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NXP |
plastic surface-mounted package .25 2.7 1.0 0.55 0.10 2.5 1.7 1.5 Note 1. The marking bar indicates the cathode HE Lp w 3.6 3.4 0.55 0.35 0.1 EUROPEAN PROJECTION ISSUE DATE 04-11-29 06-03-16 Fig. 1. Package outline SOD123F 3. Soldering 4.4 4 2.9 1.6 2.1 1.6 1.1 (2×) Fig. |
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NXP |
surface-mounted package |
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NXP |
SMD 47 DDD The four carrier tape pocket quadrants. Fig 2. Product orientation in carrier tape 3. Carrier tape dimensions 4 mm SLQ DDD Pin 1 is in quadrants 1 and 2. A0 K0 W B0 P1 direction of feed Fig 3. Carrier tape dimensions T |
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NXP |
leadless ultra small package |
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NXP |
PC board footprint |
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NXP |
(PESDxS1UB) ESD PROTECTION DIODES IN SOD 523 PACKAGE s s s s s s s Unidirectional ESD protection of one line Max. peak pulse power: PPP = 330 W at tp = 8/20 µs Low clamping voltage: VCL = 20 V at IPP = 18 A Ultra low leakage current: IRM < 700 nA ESD protection > 23 kV IEC 61000-4-2, level 4 (ESD) IEC |
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NXP |
(PESDxS1UB) ESD PROTECTION DIODES IN SOD 523 PACKAGE s s s s s s s Unidirectional ESD protection of one line Max. peak pulse power: PPP = 330 W at tp = 8/20 µs Low clamping voltage: VCL = 20 V at IPP = 18 A Ultra low leakage current: IRM < 700 nA ESD protection > 23 kV IEC 61000-4-2, level 4 (ESD) IEC |
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NXP |
(PESDxS1UB) ESD PROTECTION DIODES IN SOD 523 PACKAGE s s s s s s s Unidirectional ESD protection of one line Max. peak pulse power: PPP = 330 W at tp = 8/20 µs Low clamping voltage: VCL = 20 V at IPP = 18 A Ultra low leakage current: IRM < 700 nA ESD protection > 23 kV IEC 61000-4-2, level 4 (ESD) IEC |
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NXP |
(PESDxS1UB) ESD PROTECTION DIODES IN SOD 523 PACKAGE s s s s s s s Unidirectional ESD protection of one line Max. peak pulse power: PPP = 330 W at tp = 8/20 µs Low clamping voltage: VCL = 20 V at IPP = 18 A Ultra low leakage current: IRM < 700 nA ESD protection > 23 kV IEC 61000-4-2, level 4 (ESD) IEC |
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NXP |
(PESDxS1UB) ESD PROTECTION DIODES IN SOD 523 PACKAGE s s s s s s s Unidirectional ESD protection of one line Max. peak pulse power: PPP = 330 W at tp = 8/20 µs Low clamping voltage: VCL = 20 V at IPP = 18 A Ultra low leakage current: IRM < 700 nA ESD protection > 23 kV IEC 61000-4-2, level 4 (ESD) IEC |
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Desde 2024. D4U Semiconductor.
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