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NXP Semiconductors |
2.1 W/channel stereo class-D audio amplifier independent shutdown controls for each channel. The gain may be set at 6 dB, 12 dB, 18 dB or 24 dB with gain select pins G0 and G1. Improved immunity to noise and RF rectification is increased by high PSRR and differential circuit topology. Fast start |
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NXP Semiconductors |
2.1 W/channel stereo class-D audio amplifier independent shutdown controls for each channel. The gain may be set at 6 dB, 12 dB, 18 dB or 24 dB with gain select pins G0 and G1. Improved immunity to noise and RF rectification is increased by high PSRR and differential circuit topology. Fast start |
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NXP Semiconductors |
remote/local digital temperature sensor • Accurately senses temperature of remote microprocessor thermal • On-chip local temperature sensing • 11-bit, 0.125 °C resolution • 8 different device addresses are available for server applications. • Offset registers available for adjusting the r |
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NXP |
2 x 2.2W BTL audio amplifier I Low junction-to-ambient thermal resistance using exposed die attach paddle I Gain can be fixed with external resistors from 6 dB to 30 dB I Standby mode controlled by CMOS-compatible levels I Low standby current < 10 µA I No switch-on/switch-off plo |
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NXP |
UHF 900MHz transceiver This IC integrates most of the functions required for a half-duplex or full-duplex radio in a single integrated circuit. Additionally, the programmability implemented reduces significantly external components count, board space requirements and exter |
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NXP |
PNP general purpose transistor • Low current (max. 500 mA) • Low voltage (max. 80 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complement: MPSA06. 1 handbook, halfpage MPSA56 PINNING PIN 1 2 3 co |
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NXP |
TSA5522 |
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NXP |
High precision operational amplifier General Reference voltage section • Functionality to 1.8 V typical • Low supply current: 100 µA per amplifier (typical) Amplifier section • Reference voltage: 1.27 V ±50 mV • Reference voltage temperature characteristics: • Output current: 0.3 mA |
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NXP |
High performance mixer FM-IF and benefits Wideband data output (600 kHz minimum) Fast RSSI rise and fall times Low power consumption: 7.5 mA typical at 5 V Mixer input to >500 MHz Mixer noise figure of 12 dB at 240 MHz Crystal oscillator effective to 150 MHz (LC osci |
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NXP |
Single Pole Double Throw SPDT Switch I Wideband (DC to 1 GHz) I Low through loss (1 dB typical at 200 MHz) I Unused input is terminated internally in 50 Ω I Excellent overload capability (1 dB gain compression point +18 dBm at 300 MHz) I Low DC power (170 µA from 5 V supply) I Fast swit |
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NXP |
2 x 2.2W BTL Audio Amplifier I I I I I I I I I Low junction-to-ambient thermal resistance using exposed die attach paddle Gain can be fixed with external resistors from 6 dB to 30 dB Standby mode controlled by CMOS-compatible levels Low standby current < 10 µA No switch-on/switch |
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NXP Semiconductors |
Low-voltage mixer FM-IF and benefits Low power consumption: 5.0 mA typical at 5 V Mixer input to >100 MHz Mixer conversion power gain of 17 dB at 45 MHz Crystal oscillator effective to 100 MHz (LC oscillator or external oscillator can be used at higher frequencies) |
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NXP |
One-chip motor driver s True-Silent PWM spindle motor driver s Low heat generation due to power-efficient direct full-bridge switching of spindle motor driver s Controlled spindle motor current during acceleration and brake s Reverse torque brake function (full bridge) s A |
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NXP |
2 X 25 MW Class-G Stereo Headphone Driver Power supply range: 2.3 V to 5.5 V High efficiency employing class-G dynamic power management 2 × 25 mW into 16 Ω or 32 Ω at THD+N = 1 % Very low THD+N at 0.02 % at VO of 0.7Vo(RMS) and RL of 47 Ω Integrated charge pump to e |
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NXP |
UHF 900MHz transceiver This IC integrates most of the functions required for a half-duplex or full-duplex radio in a single integrated circuit. Additionally, the programmability implemented reduces significantly external components count, board space requirements and exter |
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NXP |
High performance mixer FM-IF and benefits Wideband data output (600 kHz minimum) Fast RSSI rise and fall times Low power consumption: 7.5 mA typical at 5 V Mixer input to >500 MHz Mixer noise figure of 12 dB at 240 MHz Crystal oscillator effective to 150 MHz (LC osci |
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NXP |
1.3 GHz I2C-bus controlled low phase noise frequency synthesizer • Complete 1.3 GHz single chip system • Optimized for low phase noise • Selectable divide-by-two prescaler • Operation up to 1.3 GHz without divide-by-two prescaler • Selectable reference divider ratio • Compatible with UK-DTT (Digital Terrestrial Te |
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NXP |
2.65 GHz bidirectional I2C-bus controlled synthesizer • Complete 2.65 GHz single-chip system • Low power 5 V, 60 mA • I2C-bus programming • In-lock flag • Varicap drive disable • Low radiation • 5-level Analog to Digital Converter (ADC) • Address selection for Picture-In-Picture (PIP), DBS tuner, etc. • |
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NXP |
1.3 GHz Bidirectional I2C-bus controlled synthesizer • Complete 1.3 GHz single chip system • Low power 5 V, 35 mA • I2C-bus programming • In-lock flag • Varicap drive disable • Low radiation • Address selection for Picture-In-Picture (PIP), DBS tuner (3 addresses) • Analog-to-digital converter • 8 bus |
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NXP |
3W BTL Audio Amplifier s s s s s s s s s Low junction-to-ambient thermal resistance using exposed die attach paddle Gain can be fixed with external resistors from 6 dB to 30 dB Standby mode controlled by CMOS-compatible levels Low standby current < 10 µA No switch-on/switch |
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Desde 2024. D4U Semiconductor.
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