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NXP |
UHF linear push-pull power transistor • internally matched input for wideband operation and high power gain • internal midpoint (r.f. ground) reduces negative feedback and improves power gain • increased input and output impedances (compared with single-ended transistors) simplify wideba |
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NXP |
VHF push-pull power MOS transistor • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS • Broadcast transmitter applications in the VHF frequency range. DESCRIPTION Dual push-pull silicon N-channel enhancement |
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NXP |
VHF push-pull power MOS transistor • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS • Broadcast transmitters in the VHF frequency range. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertic |
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NXP |
VHF push-pull power MOS transistor • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for broadcast transmitter applicatio |
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NXP |
UHF linear push-pull power transistor • High power gain • Double stage internal input matching for high input impedance • Diffused emitter-ballasting resistors enhances ruggedness • Gold metallization for high reliability. DESCRIPTION The BLV58 is a common emitter epitaxial npn silicon p |
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NXP |
UHF Push Pull Power Transistor |
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NXP |
VHF linear push-pull power MOS transistor • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for broadcast transmitter applicatio |
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NXP |
UHF push-pull power MOS transistor • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability • Designed for broadband operation. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed fo |
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NXP |
UHF linear push-pull power transistor • Double stage internal input and output matching networks for an optimum wideband capability and high gain • Polysilicon emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. APPLICATIONS |
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NXP |
UHF Push Pull Power Transistor |
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NXP |
gain push-pull amplifier s s s s s Excellent linearity Extremely low noise Silicon nitride passivation Rugged construction TiPtAu metallized crystals ensure optimal reliability 1.3 Applications s CATV systems in the 40 MHz to 550 MHz frequency range and intended for use as |
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NXP |
34 dB gain push-pull amplifier s s s s Excellent linearity Extremely low noise High gain Excellent return loss properties 1.3 Applications s Single module line extender in CATV systems operating in the 40 MHz to 750 MHz frequency range. 1.4 Quick reference data Table 1: Symbol G |
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NXP |
860 MHz/ 27.8 dB gain push-pull amplifier • Excellent linearity • High gain • Extremely low noise • Excellent return loss properties • Rugged construction • Gold metallization ensures excellent reliability. APPLICATIONS • CATV systems operating in the 40 to 870 MHz frequency range. DESCRIPTI |
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NXP |
UHF push-pull power LDMOS transistor • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (HF to 2.2 GHz). APPLICATIONS • Common source class-AB operation for PCN a |
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NXP |
VHF push-pull power MOS transistor • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applicatio |
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NXP |
VHF push-pull power MOS transistor • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS Large signal applications in the VHF frequency range. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push- |
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NXP |
VHF push-pull power MOS transistor • High power gain • Easy power control • Good thermal stability • Withstands full load mismatch. APPLICATIONS • Large signal applications in the VHF frequency range. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push-pull transistor e |
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NXP |
VHF push-pull power MOS transistor • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability. DESCRIPTION 5 5 3 Top view BLF248 PIN CONFIGURATION 1 halfpage 2 d2 g2 g1 d1 MBB157 s Dual push-pull silicon N-channel enhanceme |
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NXP |
UHF push-pull power MOS transistor • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability • Designed for broadband operation. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push-pull transistor designed for com |
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NXP |
UHF push-pull power MOS transistor • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability • Designed for broadband operation. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push-pull transistor designed for com |
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Desde 2024. D4U Semiconductor.
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