NXP PHW Hoja de datos

No.	parte #	Fabricante	Descripción
1	PHW11N50E	NXP	PowerMOS transistors Avalanche energy rated • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHB11N50E, PHW11N50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V g ID = 10.9 A RDS(ON) ≤ 0.55 Ω s GENERAL
2	PHW13N40E	NXP	PowerMOS transistors Avalanche energy rated • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHP13N40E, PHB13N40E, PHW13N40E SYMBOL d QUICK REFERENCE DATA VDSS = 400 V g ID = 13.7 A RDS(ON) ≤ 0.35 Ω
3	PHW7N60E	NXP	PowerMOS transistors Avalanche energy rated • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHP7N60E, PHB7N60E, PHW7N60E SYMBOL d QUICK REFERENCE DATA VDSS = 600 V g ID = 7 A RDS(ON) ≤ 1.2 Ω s GEN
4	PHW9N60E	NXP	PowerMOS transistors Avalanche energy rated • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHB9N60E, PHW9N60E SYMBOL d QUICK REFERENCE DATA VDSS = 600 V g ID = 8.7 A RDS(ON) ≤ 0.8 Ω s GENERAL DES
5	PHW20N50E	NXP	PowerMOS transistors Avalanche energy rated • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHW20N50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V g ID = 20 A RDS(ON) ≤ 0.27 Ω s GENERAL DESCRIPTION
6	PHW35NQ20T	NXP	N-channel TrenchMOS transistor • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 200 V ID = 35 A g RDS(ON) ≤ 70 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor i
7	PHW45NQ10T	NXP	N-channel TrenchMOS transistor • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance SYMBOL VDSS = 100 V ID = 47 A g RDS(ON) ≤ 25 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope us
8	PHW50NQ15T	NXP	N-channel TrenchMOS transistor • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 150 V ID = 50 A g RDS(ON) ≤ 35 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor i
9	PHW80NQ10T	NXP	N-channel TrenchMOS transistor • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 80 A g RDS(ON) ≤ 15 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor i
10	PHW8N50E	NXP	PowerMOS transistors Avalanche energy rated • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHP8N50E, PHB8N50E, PHW8N50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V g ID = 8.5 A RDS(ON) ≤ 0.85 Ω s
11	PHW8ND50E	NXP	PowerMOS transistors FREDFET/ Avalanche energy rated • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance • Fast reverse recovery diode SYMBOL d QUICK REFERENCE DATA VDSS = 500 V ID = 8.5 A g RDS(ON) ≤ 0.85 Ω s
12	PHW9N60E	NXP	PowerMOS transistors Avalanche energy rated • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHB9N60E, PHW9N60E SYMBOL d QUICK REFERENCE DATA VDSS = 600 V g ID = 8.7 A RDS(ON) ≤ 0.8 Ω s GENERAL DES
13	PHW11N50E	NXP	PowerMOS transistors Avalanche energy rated • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHB11N50E, PHW11N50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V g ID = 10.9 A RDS(ON) ≤ 0.55 Ω s GENERAL
14	PHW14N50E	NXP	PowerMOS transistors Avalanche energy rated • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHW14N50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V g ID = 14 A RDS(ON) ≤ 0.4 Ω s GENERAL DESCRIPTION N
15	PHW7N60	NXP	PowerMOS transistor Gate-source voltage Single pulse avalanche energy Peak avalanche current Operating junction and storage temperature range CONDITIONS Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C Tmb > 25 ˚C VDD ≤ 50 V; starting Tj = 25˚C;