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NXP |
NPN switching transistor • Low current (max. 200 mA) • Low voltage (max. 15 V). APPLICATIONS • High-speed switching. DESCRIPTION NPN switching transistor in a TO-92; SOT54 plastic package. PINNING PIN 1 2 3 emitter base collector PH2369 DESCRIPTION 1 handbook, halfpage 2 |
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NXP |
PNP switching transistor • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • Switching and linear amplification. DESCRIPTION PNP switching transistor in a TO-92; SOT54 plastic package. NPN complement: PH2222A. PINNING PIN 1 2 3 emitter base collector PH29 |
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NXP |
PNP switching transistor • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • Switching and linear amplification. DESCRIPTION PNP switching transistor in a TO-92; SOT54 plastic package. NPN complement: PH2222A. PINNING PIN 1 2 3 emitter base collector PH29 |
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NXP |
N-channel TrenchMOS-TM logic level FET s Optimized for use in DC-to-DC converters s Low threshold voltage s Very low switching and conduction losses s Low thermal resistance. 1.3 Applications s DC-to-DC converters s Voltage regulators s Switched-mode power supplies s Notebook computers. |
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NXP |
NPN switching transistor • High current (max. 600 mA) • Low voltage (max. 40 V). APPLICATIONS • Switching and linear amplification. DESCRIPTION NPN switching transistor in a TO-92; SOT54 plastic package. PNP complement: PH2907A. 1 handbook, halfpage 2 3 PH2222A PINNING PIN |
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NXP |
N-channel enhancement mode field-effect transistor s Low thermal resistance s Low gate drive current s SO8 equivalent area footprint s Low on-state resistance. 1.3 Applications s DC-to-DC converters s Portable appliances s Switched mode power supplies s Notebook computers. 1.4 Quick reference data |
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NXP |
N-channel TrenchMOS ultra low level FET s Low thermal resistance s Low threshold voltage s SO8 equivalent area footprint s Low on-state resistance. 1.3 Applications s DC-to-DC converters s Portable appliances s Switched-mode power supplies s Notebook computers. 1.4 Quick reference data s |
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NXP Semiconductors |
N-Channel MOSFET s Low thermal resistance s Low gate drive current s SO8 equivalent area footprint s Low on-state resistance. 1.3 Applications s DC-to-DC converters s Switched-mode power supplies 1.4 Quick reference data s VDS ≤ 100 V s Ptot ≤ 62.5 W s ID ≤ 34.3 A |
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NXP Semiconductors |
N-channel TrenchMOS ultra low level FET and benefits Higher operating power due to low thermal resistance Interfaces directly with low voltage gate drivers Low conduction losses due to low on-state resistance 1.3 Applications DC-to-DC convertors Notebook computers Portable equ |
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NXP Semiconductors |
N-channel TrenchMOS ultra low level FET I Logic level threshold I Optimized for use in DC-to-DC converters I 100 % RG tested I Lead-free package I Very low switching and conduction losses 1.3 Applications I DC-to-DC converters I Voltage regulators I Switched-mode power supplies I PC Mothe |
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NXP Semiconductors |
N-Channel MOSFET and benefits High efficiency due to low switching and conduction losses Suitable for logic level gate drive sources 1.3 Applications Consumer applications Desktop Voltage Regulator Module (VRM) Notebook Voltage Regulator Module (VRM) 1. |
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NXP |
Migrate classic contactless smart-card-IC to mainstream contactless smart card applications. It is the only mainstream IC compatible with MIFARE Classic EV1 1K (MF1S50yyX/V1), MIFARE Classic EV1 4K (MF1S70yyX/V1) and the MIFARE Plus EV0 product family (MF1PLUSx0y1 and MF1SPLUSx0y1) which off |
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NXP |
Migrate classic contactless smart-card-IC to mainstream contactless smart card applications. It is the only mainstream IC compatible with MIFARE Classic EV1 1K (MF1S50yyX/V1), MIFARE Classic EV1 4K (MF1S70yyX/V1) and the MIFARE Plus EV0 product family (MF1PLUSx0y1 and MF1SPLUSx0y1) which off |
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Desde 2024. D4U Semiconductor.
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