NXP LF2 Hoja de datos

No.	parte #	Fabricante	Descripción
1	BLF2045	NXP	UHF power LDMOS transistor • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation. APPLICATIONS • Communication transmitter applications (PCN/PCS) in the 1.
2	BLF2047	NXP	UHF power LDMOS transistor • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (1.8 to 2.2 GHz). • Internal input and output matching for high gain and e
3	BLF278	NXP	VHF push-pull power MOS transistor • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS • Broadcast transmitters in the VHF frequency range. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertic
4	BLF246	NXP	VHF power MOS transistor • High power gain • Low noise figure • Easy power control • Good thermal stability • Withstands full load mismatch. APPLICATIONS • Large signal amplifier applications in the VHF frequency range. handbook, halfpage BLF246 PINNING - SOT121 PIN 1 2 3 4
5	BLF277	NXP	VHF power MOS transistor • High power gain • Easy power control • Gold metallization ensures excellent reliability • Good thermal stability • Withstands full load mismatch. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amp
6	BLF2022-40	NXP	UHF power LDMOS transistor • High power gain • Easy power control • Excellent ruggedness • Designed for broadband operation (2.0 to 2.2 GHz) • Internal input and output matching for high gain and efficiency • Improved linearity at backoff levels. 1 BLF2022-40 PINNING PIN 1 2
7	BLF2425M7L140	NXP	Power LDMOS transistor and benefits http://www.DataSheet4U.net/         High efficiency High power gain Excellent ruggedness Excellent thermal stability Integrated ESD protection Designed for broadband operation (2400 MHz to 2500 MHz) Internally matched Compliant
8	BLF2425M7LS250P	NXP	Power LDMOS transistor and benefits  High efficiency  Easy power control  Excellent ruggedness  Excellent thermal stability  Integrated ESD protection  Designed for broadband operation (2400 MHz to 2500 MHz)  Internally matched  Compliant to Directive 2002/95/EC, r
9	BLF2425M9L30	NXP	Power LDMOS transistor and benefits  High efficiency  High power gain  Excellent ruggedness  Excellent thermal stability  Integrated ESD protection  Designed for broadband operation (2400 MHz to 2500 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of
10	BLF202	NXP	HF/VHF power MOS transistor • High power gain • Easy power control • Gold metallization • Good thermal stability • Withstands full load mismatch. APPLICATIONS • Communications transmitters in the HF/VHF range with a nominal supply voltage of 12.5 V. DESCRIPTION Silicon N-channe
11	BLF2043	NXP	UHF power LDMOS transistor • High power gain • Easy power control • Excellent ruggedness • Source on mounting base eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (HF to 2.2 GHz). handbook, halfpage BLF2043 PINNING - SOT538A PIN 1 2
12	BLF2047L	NXP	UHF power LDMOS transistor • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (1.8 to 2 GHz) • Internal input and output matching for high gain and effi
13	BLF2048	NXP	UHF push-pull power LDMOS transistor • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (HF to 2.2 GHz). APPLICATIONS • Common source class-AB operation for PCN a
14	BLF245B	NXP	VHF push-pull power MOS transistor • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applicatio
15	BLF246B	NXP	VHF push-pull power MOS transistor • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS Large signal applications in the VHF frequency range. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push-
16	BLF247B	NXP	VHF push-pull power MOS transistor • High power gain • Easy power control • Good thermal stability • Withstands full load mismatch. APPLICATIONS • Large signal applications in the VHF frequency range. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push-pull transistor e
17	BLF248	NXP	VHF push-pull power MOS transistor • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability. DESCRIPTION 5 5 3 Top view BLF248 PIN CONFIGURATION 1 halfpage 2 d2 g2 g1 d1 MBB157 s Dual push-pull silicon N-channel enhanceme
18	BLF276	NXP	VHF power MOS transistor • High power gain • Easy power control • Good thermal stability DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor delivers an output po
19	BLF2022-120	NXP	UHF push-pull power LDMOS transistor • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (HF to 2.2 GHz). APPLICATIONS • Common source class-AB operation for PCN a
20	BLF2022-125	NXP	UHF power LDMOS transistor • Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 1 A – Output power = 20 W (AV) – Gain = 12 dB – Efficiency = 19% – ACPR = −42 dBc at 3.84 MHz • Easy power control • Excellent ruggedness • High power gain • Excellent thermal stabil