| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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NXP |
GSM 4W power amplifiers • Power Amplifier (PA) overall efficiency 45% • 35.5 dB gain • 0 dBm input power • Gain control range >55 dB • Integrated power sensor driver • Low output noise floor of PA < −129 dBm/Hz in GSM RX band • Wide operating temperature range −20 to +85 °C |
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NXP |
GSM/DCS/PCS power amplifier • Operates at 3.6 V battery supply voltage • Power Amplifier (PA) output power: 35 dBm in GSM band and 32.5 dBm in DCS/PCS band • Input power: 5 dBm in GSM band and DCS/PCS band • Wide operating temperature range from Tamb = −20 to +85 °C • HTSSOP20 |
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NXP |
DECT 500 mW power amplifier • Power Amplifier (PA) overall efficiency 40% • 27 dB gain • 0 dBm input power • Operation possible without negative supply • Wide operating temperature range −30 to +85 °C • SSOP16 package. APPLICATIONS • 1.88 to 1.9 GHz transceivers for DECT applic |
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NXP |
DECT 500 mW power amplifier • Power Amplifier (PA) overall efficiency 55% • 27.5 dBm saturated output power at 3.2 V • 0 dBm input power • 40 dB linear gain • Operation without negative supply • Wide operating temperature range −30 to +85 °C • SSOP16 package. APPLICATIONS CGY2 |
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NXP |
High dynamic range dual LNA MMIC • Dual Low Noise Amplifier (LNA) Monolithic Microwave Integrated Circuit (MMIC) • Typical noise figure of 0.55 dB • Typical gain of 16.3 dB at 1810 MHz • Input IP3 of 13.5 dBm at 1810 MHz • Low current of 58 mA at 2.5 V for each channel • Low cost SS |
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NXP |
CATV amplifier module |
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NXP |
GSM 4W power amplifiers • Power Amplifier (PA) overall efficiency 45% • 35.5 dB gain • 0 dBm input power • Gain control range >55 dB • Integrated power sensor driver • Low output noise floor of PA < −129 dBm/Hz in GSM RX band • Wide operating temperature range −20 to +85 °C |
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NXP |
GSM 4W power amplifier • Power Amplifier (PA) overall efficiency 52% • 35.5 dB gain • 0 dBm input power • Gain control range >55 dB • Low output noise floor of PA < −130 dBm/Hz in GSM RX band • Wide operating temperature range −20 to +85 °C • LQFP 48 pin package • Compatib |
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NXP |
GSM/DCS/PCS power amplifier • Operates at 3.6 V battery supply voltage • Power Amplifier (PA) output power: 35 dBm in GSM band and 32.5 dBm in DCS/PCS band • Input power: 5 dBm in GSM band and DCS/PCS band • Wide operating temperature range from Tamb = −20 to +85 °C • HTSSOP20 |
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NXP |
DCS/PCS 2 W power amplifier • Power Amplifier (PA) overall efficiency 50% (DCS) • 34 dB gain • 0 dBm input power • Gain control range >50 dB • Integrated power sensor driver • Low output noise floor of PA <−121 dBm/Hz in DCS/PCS RX band • Wide operating temperature range −20 to |
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NXP |
DECT 500 mW power amplifier • Power Amplifier (PA) overall efficiency 55% • 27.5 dBm saturated output power at 3.2 V • 0 dBm input power • 40 dB linear gain • Operation without negative supply • Wide operating temperature range −30 to +85 °C • SSOP16 package. APPLICATIONS CGY2 |
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NXP |
High dynamic range dual LNA MMIC • Dual Low Noise Amplifier (LNA) Monolithic Microwave Integrated Circuit (MMIC) • Typical noise figure of 0.55 dB • Typical gain of 16.3 dB at 1810 MHz • Input IP3 of 13.5 dBm at 1810 MHz • Low current of 58 mA at 2.5 V for each channel • Low cost SS |
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NXP |
860 MHz/ 27.8 dB gain push-pull amplifier • Excellent linearity • High gain • Extremely low noise • Excellent return loss properties • Rugged construction • Gold metallization ensures excellent reliability. APPLICATIONS • CATV systems operating in the 40 to 870 MHz frequency range. DESCRIPTI |
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NXP Semiconductors |
27 dB gain GaAs push-pull amplifier I I I I I I I I Excellent linearity, stability and reliability Extremely low noise Excellent return loss properties Rugged construction Unconditionally stable Thermally optimized design Superior levels of ESD protection Compliant to Directive 2002/95 |
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NXP Semiconductors |
1 GHz - 32 dB gain GaAs push-pull amplifier and benefits Excellent linearity, stability and reliability Extremely low noise Excellent return loss properties Rugged construction Unconditionally stable Thermally optimized design Superior levels of ESD protection Compliant to Dire |
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NXP Semiconductors |
1 GHz - 21 dB gain GaAs push-pull amplifier and benefits Excellent linearity, stability and reliability Extremely low noise Excellent return loss properties Rugged construction Unconditionally stable Thermally optimized design Superior levels of ESD protection Compliant to Dire |
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NXP Semiconductors |
1 GHz - 23 dB gain GaAs push-pull amplifier and benefits Excellent linearity, stability and reliability Extremely low noise Excellent return loss properties Rugged construction Unconditionally stable Thermally optimized design Superior levels of ESD protection Compliant to Dire |
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Desde 2024. D4U Semiconductor.
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