| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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NXP |
4Q Triac ≤ 102 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs T2+ G+ T2+ GT2- GT2- G+ CONDITIONS MIN. -40 -500 5001 MAX. -600 6001 8 65 71 21 50 50 50 10 2 5 5 0.5 150 125 -800 800 UNIT |
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NXP |
SCR and benefits • Planar passivated for voltage ruggedness and reliability • Sensitive gate • Direct triggering from low power gate circuits and logic ICs 3. Applications • Ignition circuits • Lighting ballasts • Protection circuits • Switched Mode Pow |
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NXP |
4Q Triac 7 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs T2+ G+ T2+ GT2- GT2- G+ CONDITIONS MIN. -40 -500 5001 MAX. -600 6001 4 25 27 3.1 50 50 50 10 2 5 5 0.5 150 125 -800 800 UNIT V A A |
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NXP |
Triacs NS MIN. VDRM IT(RMS) ITSM I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj Repetitive peak off-state - voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Tmb ≤ 99 ˚C - full sine wave; Tj = 25 ˚C prior to surge t = 20 m |
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NXP |
Triacs urrent Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Tmb ≤ 107 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 6 A; IG = 0.2 A; dIG/ |
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NXP |
4Q Triac and benefits • High blocking voltage capability • Less sensitive gate for improved noise immunity • Planar passivated for voltage ruggedness and reliability • Surface-mountable package • Triggering in all four quadrants 3. Applications • General pur |
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NXP |
Thyristors I High thermal cycling performance I High bidirectional blocking voltage 1.3 Applications I Motor control I Ignition circuits I Static switching I Protection circuits 1.4 Quick reference data I VDRM ≤ 500 V (BT151-500L/R) I VRRM ≤ 500 V (BT151-50 |
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NXP |
Triacs urrent Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Tsp ≤ 108 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 1.5 A; IG = 0.2 A; dI |
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NXP |
Triacs METER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Tmb ≤ 102 ˚C full sine wave; Tj = 25 ˚C prior to surge t = |
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NXP |
4Q Triac and benefits • Direct triggering from low power drivers and logic ICs • High blocking voltage capability • Planar passivated for voltage ruggedness and reliability • Sensitive gate • Triggering in all four quadrants 3. Applications • General purpose |
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NXP |
4Q Triac and benefits • High blocking voltage capability • Isolated package • Less sensitive gate for improved noise immunity • Planar passivated for voltage ruggedness and reliability • Triggering in all four quadrants 3. Applications • General purpose moto |
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NXP |
Thyristors and benefits High reliability High surge current capability High thermal cycling performance 1.3 Applications Ignition circuits Motor control Protection Circuits Static switching 1.4 Quick reference data Table 1. Quick reference S |
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NXP |
SCR and benefits • Planar passivated for voltage ruggedness and reliability • Sensitive gate • Direct triggering from low power gate circuits and logic ICs 3. Applications • Ignition circuits • Lighting ballasts • Protection circuits • Switched Mode Pow |
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NXP |
Triacs ONDITIONS MIN. VDRM IT(RMS) ITSM I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering Peak ga |
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NXP |
Triacs METER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Tmb ≤ 107 ˚C full sine wave; Tj = 25 ˚C prior to surge t = |
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NXP |
Triacs ne wave; Ths ≤ 56 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs T2+ G+ T2+ GT2- GT2- G+ CONDITIONS MIN. -40 -500 5001 MAX. -600 6001 12 95 105 45 50 50 50 10 2 5 5 0.5 150 125 - |
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NXP |
4Q Triac and benefits • Direct triggering from low power drivers and logic ICs • High blocking voltage capability • Isolated package • Planar passivated for voltage ruggedness and reliability • Sensitive gate • Triggering in all four quadrants 3. Application |
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NXP |
SCR and benefits • Fast commutation performance for higher frequency operation • Full wave rectified AC applications • Sensitive gate • Direct triggering from microcontrollers, low power drivers and logic ICs 3. Applications • Earth leakage circuit brea |
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NXP |
4Q Triac and benefits • Compact package • High blocking voltage capability • Less sensitive gate for improved noise immunity • Planar passivated for voltage ruggedness and reliability • Triggering in all four quadrants 3. Applications • General purpose low p |
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NXP |
Triacs urrent I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Tmb ≤ 107 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs T2+ G+ T2+ GT2- GT2- G+ |
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Desde 2024. D4U Semiconductor.
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