No. | parte # | Fabricante | Descripción | Hoja de Datos |
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NXP |
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier and benefits 400 MHz to 2700 MHz frequency operating range 16 dB small signal gain at 2 GHz 24 dBm output power at 1 dB gain compression Integrated active biasing External matching allows broad application optimization of the electrical |
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NXP |
1.2GHz 16dB gain CATV amplifier and benefits Internally biased Frequency range of 40 MHz to 1200 MHz High linearity with an IP3O of 47 dBm and an IP2O of 85 dBm Operating from 5 V to 8 V supply High gain output 1dB compression point of 30 dBm 75 input and output imp |
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NXP |
high linearity Si variable gain amplifier and benefits Dual independent digitally controlled 28 dB gain range VGAs, with 5-bit control interface 50 MHz to 500 MHz frequency operating range Gain step size: 1 dB 0.1 dB 22 dB power gain Fast gain stage switching capability 16.5 dB |
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NXP |
MMIC wideband medium power amplifier and benefits Broadband 50 gain block 20 dBm output power SOT89 package Single supply voltage needed 1.3 Applications Broadband medium power gain blocks Small signal high linearity amplifiers Variable gain and high output power in comb |
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NXP |
MMIC mixer • Large frequency range: – Cellular band (900 MHz) – PCS band (1900 MHz) – WLAN band (2.4 GHz). • High isolation • High linearity • High conversion gain. APPLICATIONS Receiver side of wireless systems that require high conversion gain and high linear |
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NXP |
MMIC wideband amplifier s s s s s s s s Internally matched to 50 Ω Wide frequency range (3.2 GHz at 3 dB bandwidth) Flat 24 dB gain (±1 dB up to 2.8 GHz) −2.5 dBm output power at 1 dB compression point Good linearity for low current (IP3out = 10 dBm) Low second harmonic; −3 |
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NXP |
MMIC wideband amplifier I I I I I I I I Internally matched to 50 Ω Wide frequency range (2.7 GHz at 3 dB gain bandwidth) Flat 21 dB gain (± 1 dB from DC up to 2500 MHz) Very low current (4.6 mA) at low supply voltage of 3 V Very good reverse isolation (> 50 dB up to 2 GHz) |
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NXP |
1 GHz 15 dB gain wideband amplifier MMIC and benefits Internally biased Flat gain High linearity with an IP3O of 40 dBm and an IP2O of 60 dBm Noise figure of 2.5 dB 75 input and output impedance Operating from 5 V to 8 V supply 1.3 Applications General wideband amplifiers |
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NXP |
1.2GHz 18dB gain CATV amplifier and benefits Internally biased Frequency range of 40 MHz to 1200 MHz High linearity with an IP3O of 47 dBm and an IP2O of 85 dBm Operating from 5 V to 8 V supply High gain output 1dB compression point of 30 dBm 75 input and output imp |
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NXP |
Silicon MMIC amplifier • Low current • Very high power gain • Low noise figure • Integrated temperature compensated biasing • Control pin for adjustment bias current • Supply and RF output pin combined. APPLICATIONS • RF front end • Wideband applications, e.g. analog and d |
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NXP |
MMIC wideband amplifier and benefits Internally matched to 50 A gain of 30.0 dB at 2150 MHz Output power at 1 dB gain compression = 4 dBm at 2150 MHz Supply current = 19.9 mA at a supply voltage of 3.3 V Reverse isolation > 36 dB up to 2150 MHz Good linearity |
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NXP Semiconductors |
MMIC wideband amplifier and benefits Internally matched to 50 A gain of 22.2 dB at 250 MHz increasing to 23.0 dB at 2150 MHz Output power at 1 dB gain compression = 2 dBm Supply current = 14.3 mA at a supply voltage of 3.3 V Reverse isolation > 29 dB up to 2 GHz |
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NXP Semiconductors |
high linearity silicon amplifier and benefits 400 MHz to 2700 MHz frequency operating range 11 dB small signal gain at 2 GHz 28 dBm output power at 1 dB gain compression Integrated active biasing External matching allows broad application optimization of the electrical per |
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NXP |
MMIC Wideband Amplifier and benefits Input internally matched to 50 A gain of 32.2 dB at 950 MHz Output power at 1 dB gain compression = 8 dBm Supply current = 29.9 mA at a supply voltage of 5 V Reverse isolation > 34 dB up to 2 GHz Good linearity with low sec |
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NXP |
MMIC Wideband Amplifier and benefits Input internally matched to 50 A gain of 23.2 dB at 250 MHz increasing to 24.3 dB at 2150 MHz Output power at 1 dB gain compression = 4 dBm Supply current = 17.4 mA at a supply voltage of 5 V Reverse isolation > 32 dB up to 2 |
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NXP Semiconductors |
MMIC wideband amplifier and benefits Internally matched to 50 A gain of 31.1 dB at 500 MHz Output power at 1 dB gain compression = 4 dBm Supply current = 16.0 mA at a supply voltage of 2.5 V Reverse isolation > 52 dB up to 750 MHz Good linearity with low secon |
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NXP |
MMIC wideband medium power amplifier I I I I Broadband 50 Ω gain block 20 dBm output power SOT89 package Single supply voltage needed 1.3 Applications I I I I I I I I Broadband medium power gain blocks Small signal high linearity amplifiers Variable gain and high output power in combina |
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NXP |
1 GHz 18 dB gain wideband amplifier MMIC and benefits Internally biased Flat gain High linearity with an IP3O of 40 dBm and an IP2O of 60 dBm Noise figure of 2.1 dB 75 input and output impedance Operating from 5 V to 8 V supply 1.3 Applications General wideband amplifiers |
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NXP |
1.2GHz 20dB gain CATV amplifier and benefits Internally biased High gain output 1dB compression point of 30 dBm Frequency range of 40 MHz to 1200 MHz 75 input and output impedance High linearity with an IP3O of 46.5 dBm and ICC(tot) can be controlled between an |
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NXP |
MMIC wideband amplifier and benefits Internally matched to 50 A gain of 26.4 dB at 2150 MHz Output power at 1 dB gain compression = 8 dBm Supply current = 21.7 mA at a supply voltage of 5.0 V Reverse isolation > 37 dB up to 2150 MHz Good linearity with low sec |
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