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NXP Semiconductors |
NPN wideband silicon germanium RF transistor and benefits Low noise high gain microwave transistor Noise figure (NF) = 0.7 dB at 5.8 GHz High maximum stable gain 27 dB at 1.8 GHz 110 GHz fT silicon germanium technology 1.3 Applications 2nd LNA stage and mixer stage in DBS LNB’s Sate |
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NXP |
NPN wideband silicon RF transistor and benefits • Low noise, high breakdown RF transistor • AEC-Q101 qualified • Minimum noise figure (NFmin) = 0.7 dB at 900 MHz • Maximum stable gain 21.5 dB at 900 MHz • 11 GHz fT silicon technology 1.3 Applications • Applications requiring high supp |
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NXP Semiconductors |
NPN wideband silicon RF transistor and benefits Low noise high linearity microwave transistor High output third-order intercept point 34 dBm at 1.8 GHz 40 GHz fT silicon technology 1.3 Applications Ka band oscillators DRO’s C-band high output buffer amplifier ZigBee LTE |
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NXP |
NPN wideband silicon RF transistor and benefits Low noise, high breakdown RF transistor AEC-Q101 qualified Minimum noise figure (NFmin) = 0.6 dB at 900 MHz Maximum stable gain 18 dB at 900 MHz 11 GHz fT silicon technology 1.3 Applications Applications requiring high supply |
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NXP |
NPN wideband silicon RF transistor and benefits Low noise, high linearity, high breakdown RF transistor AEC-Q101 qualified Minimum noise figure (NFmin) = 0.75 dB at 900 MHz Maximum stable gain 15.5 dB at 900 MHz 11 GHz fT silicon technology 1.3 Applications Applications re |
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NXP |
NPN wideband silicon RF transistor and benefits Low noise, high linearity, high breakdown RF transistor AEC-Q101 qualified Minimum noise figure (NFmin) = 0.75 dB at 900 MHz Maximum stable gain 14 dB at 900 MHz 11 GHz fT silicon technology 1.3 Applications Applications requ |
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NXP |
NPN wideband silicon RF transistor and benefits Medium power, high linearity, high breakdown voltage RF transistor AEC-Q101 qualified Maximum stable gain 13 dB at 900 MHz PL(1dB) 21.5 dBm at 900 MHz 8.5 GHz fT silicon technology 1.3 Applications Automotive applications B |
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NXP |
NPN wideband silicon RF transistor and benefits Medium power, high linearity, high breakdown voltage RF transistor AEC-Q101 qualified Maximum stable gain 11 dB at 900 MHz PL(1dB) 22 dBm at 900 MHz 8 GHz fT silicon technology 1.3 Applications Automotive applications Broad |
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NXP |
NPN wideband silicon RF transistor and benefits Low noise, high breakdown RF transistor AEC-Q101 qualified Minimum noise figure (NFmin) = 0.7 dB at 900 MHz Maximum stable gain 18 dB at 900 MHz 11 GHz fT silicon technology 1.3 Applications Applications requiring high supply |
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NXP |
NPN wideband silicon RF transistor and benefits Low noise, high breakdown RF transistor AEC-Q101 qualified Minimum noise figure (NFmin) = 0.6 dB at 900 MHz Maximum stable gain 18.5 dB at 900 MHz 11 GHz fT silicon technology 1.3 Applications Applications requiring high supp |
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NXP |
NPN wideband silicon RF transistor and benefits Low noise, high breakdown RF transistor AEC-Q101 qualified Minimum noise figure (NFmin) = 0.65 dB at 900 MHz Maximum stable gain 20 dB at 900 MHz 11 GHz fT silicon technology 1.3 Applications Applications requiring high suppl |
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NXP |
NPN wideband silicon RF transistor and benefits Low noise, high breakdown RF transistor AEC-Q101 qualified Minimum noise figure (NFmin) = 0.65 dB at 900 MHz Maximum stable gain 20 dB at 900 MHz 11 GHz fT silicon technology 1.3 Applications Applications requiring high suppl |
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NXP |
NPN wideband silicon RF transistor and benefits • Low noise, high breakdown RF transistor • AEC-Q101 qualified • Minimum noise figure (NFmin) = 0.7 dB at 900 MHz • Maximum stable gain 21 dB at 900 MHz • 11 GHz fT silicon technology 1.3 Applications • Applications requiring high supply |
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NXP |
NPN wideband silicon RF transistor and benefits Low noise, high breakdown RF transistor AEC-Q101 qualified Minimum noise figure (NFmin) = 0.6 dB at 900 MHz Maximum stable gain 18.5 dB at 900 MHz 11 GHz fT silicon technology 1.3 Applications Applications requiring high supp |
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NXP |
NPN SiGe wideband transistor • Very high power gain • Very low noise figure • High transition frequency • Emitter is thermal lead • Low feedback capacitance • 45 GHz SiGe process. APPLICATIONS • RF front end • Wideband applications, e.g. analog and digital cellular telephones, c |
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NXP |
NPN SiGe wideband transistor • Very high power gain • Very low noise figure • High transition frequency • Emitter is thermal lead • Low feedback capacitance • 45 GHz SiGe process. APPLICATIONS • RF front end • Wideband applications, e.g. analog and digital cellular telephones, c |
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NXP |
NPN Wideband Silicon Germanium RF Transistor and benefits Low noise high gain microwave transistor Noise figure (NF) = 1.7 dB at 5.8 GHz High associated gain 13.5 dB at 5.8 GHz 40 GHz fT silicon technology 1.3 Applications Low current battery equipped applications Low noise amplifie |
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NXP Semiconductors |
wideband silicon germanium RF transistor and benefits Low noise high linearity RF transistor High maximum output third-order intercept point 32 dBm at 1.8 GHz 110 GHz fT silicon germanium technology 1.3 Applications www.DataSheet4U.net Ka band oscillators DRO’s High |
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NXP Semiconductors |
NPN wideband silicon RF transistor and benefits Low noise high linearity RF transistor High output third-order intercept point 27 dBm at 1.8 GHz 40 GHz fT silicon technology 1.3 Applications Analog/digital cordless applications X-band high output buffer amplifier ZigBee |
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NXP |
NPN wideband silicon RF transistor and benefits Low noise, high breakdown RF transistor AEC-Q101 qualified Minimum noise figure (NFmin) = 0.7 dB at 900 MHz Maximum stable gain 22 dB at 900 MHz 11 GHz fT silicon technology 1.3 Applications Applications requiring high supply |
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Desde 2024. D4U Semiconductor.
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