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NXP |
NPN video transistor • Low output capacitance • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS • Pre-stage driver in high-resolution colour graphics monitors. DESCRIPTION NPN video transistor in a SOT32 (TO-126) package. PINNING P |
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NXP |
PNP video transistor Ts is the temperature at the soldering point of the collector pin. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature junction t |
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NXP |
NPN video transistors • High breakdown voltages • Low output capacitance • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS • Buffer/driver in high-resolution colour graphics monitors. DESCRIPTION NPN video transistor in a SOT32 (TO- |
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NXP |
PNP video transistors • High breakdown voltages • Low output capacitance • Optimum temperature profile • Excellent reliability properties. APPLICATIONS • Buffer/driver in high-resolution colour graphics monitors. PIN 1 2 3 DESCRIPTION emitter collector base DESCRIPTION PN |
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NXP |
NPN 8 GHz wideband transistor • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS Satellite TV tuners and RF portable communications equipment up to 2 GHz. PINNING PIN 1 2 3 base emitter collector Marki |
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NXP |
NPN 4 GHz wideband transistor or your cooperation and understanding, NXP Semiconductors NXP Semiconductors NPN 4 GHz wideband transistor DESCRIPTION NPN transistor in a plastic SOT89 envelope intended for application in thick and thin-film circuits. It is primarily intended for |
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NXP |
NPN video transistor s the temperature at the soldering point of the collector pin. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature junction tempe |
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NXP |
NPN video transistor CBO VCER VEBO IC IC(AV) Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature junction temperature CONDITIONS open emi |
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NXP |
NPN video transistor • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS • CRT amplifier buffer/driver in high-resolution colour graphics monitors. DESCRIPTION |
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NXP |
PNP video transistors • High breakdown voltages • Low output capacitance • Optimum temperature profile • Excellent reliability properties. APPLICATIONS • Buffer/driver in high-resolution colour graphics monitors. PIN 1 2 3 DESCRIPTION emitter collector base DESCRIPTION PN |
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NXP |
PNP video transistors • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS • Buffer/driver in high-resolution colour graphics monitors. DESCRIPTION PNP video tran |
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NXP |
PNP video transistors • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability • Surface mounting. APPLICATIONS • Buffer/driver in high-resolution colour graphics monitors. DESCRIP |
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NXP |
NPN 4 GHz wideband transistor high output voltage capabilities. PINNING PIN 1 2 3 4 DESCRIPTION Code: BFQ34/01 collector emitter base emitter 2 Top view lfpage BFQ34 4 1 3 MBK187 Fig.1 SOT122A. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot fT Vo PARAMETER collector-base volt |
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NXP |
NPN wideband dual transistor and benefits High gain High output voltage Low noise Gold metallization ensures excellent reliability Low thermal resistance. 1.3 Applications VHF, UHF and CATV amplifiers. 1.4 Quick reference data Table 1. Symbol VCBO VCES VEBO IC Pt |
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NXP |
NPN 7 GHz wideband transistor • High power gain • High output voltage • High maximum junction temperature • Gold metallization ensures excellent reliability. APPLICATIONS It is primarily intended for use in MATV and microwave amplifiers, such as aerial amplifiers, radar systems, |
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NXP |
NPN 4 GHz Wideband Transistor uation Only. www.DataSheet4U.com |
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NXP |
PNP 5 GHz wideband transistor or your cooperation and understanding, NXP Semiconductors NXP Semiconductors PNP 5 GHz wideband transistor DESCRIPTION PNP transistor in a SOT89 envelope. It is intended for use in UHF applications such as broadband aerial amplifiers (30 to 860 MHz |
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NXP |
NPN video transistor •Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability • High current applicability • Surface mounting. APPLICATIONS • Video amplifier cascode driver in high-resolution colour graphic |
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NXP |
NPN video transistor BO IC IC(AV) Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature junction temperature CONDITIONS open emitter RBE = |
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NXP |
NPN video transistor IEC 134). SYMBOL VCBO VCER VEBO IC IC(AV) Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector |
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Desde 2024. D4U Semiconductor.
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