| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
NXP |
UHF mixer diode • Low forward voltage • Hermetically-sealed leaded glass package • Low diode capacitance. APPLICATIONS • UHF mixer • Sampling circuits • Modulators • Phase detection. Cathode indicated by a grey band. k handbook, halfpage a BA481 DESCRIPTION Planar |
|
|
|
|
NXP |
Band-switching diodes • Continuous reverse voltage: max. 35 V • Continuous forward current: max. 100 mA • Low diode capacitance: max. 1.0 to 1.6 pF • Low diode forward resistance: max. 0.7 to 1.2 Ω. The diodes are type branded. BA482; BA483; BA484 DESCRIPTION Planar high |
|
|
|
|
NXP |
Band-switching diodes • Continuous reverse voltage: max. 35 V • Continuous forward current: max. 100 mA • Low diode capacitance: max. 1.0 to 1.6 pF • Low diode forward resistance: max. 0.7 to 1.2 Ω. The diodes are type branded. BA482; BA483; BA484 DESCRIPTION Planar high |
|
|
|
|
NXP |
AM band-switching diode • Continuous reverse voltage: max. 20 V • Continuous forward current: max. 50 mA • Low diode capacitance: max. 2.5 pF • Low diode forward resistance: max. 1.2 Ω. APPLICATION • Band switching in AM radio receivers. The diodes are type branded. BA423A |
|
|
|
|
NXP |
AM band-switching diode • Continuous reverse voltage: max. 20 V • Continuous forward current: max. 50 mA • Low diode capacitance: max. 2.5 pF • Low diode forward resistance: max. 1.2 Ω. APPLICATION • Band switching in AM radio receivers. handbook, 4 columns BA423AL DESCRI |
|
|
|
|
NXP |
Band-switching diodes • Continuous reverse voltage: max. 35 V • Continuous forward current: max. 100 mA • Low diode capacitance: max. 1.0 to 1.6 pF • Low diode forward resistance: max. 0.7 to 1.2 Ω. The diodes are type branded. BA482; BA483; BA484 DESCRIPTION Planar high |
|
Desde 2024. D4U Semiconductor.
|