| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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NXP |
PHB55N03LT • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance • Logic level compatible PHP55N03LT, PHB55N03LT PHD55N03LT QUICK REFERENCE DATA d SYMBOL VDSS = 25 V ID = 55 A RDS(ON) ≤ 14 mΩ (VGS = 10 V) RDS(ON) ≤ 18 |
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NXP |
RF LDMOS Wideband Integrated Power Amplifiers • Production Tested in a Symmetrical Doherty Configuration • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters • On--Chip Matching (50 Ohm |
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NXP |
N-Channel MOSFET • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance • Logic level compatible PHP55N03LT, PHB55N03LT PHD55N03LT QUICK REFERENCE DATA d SYMBOL VDSS = 25 V ID = 55 A RDS(ON) ≤ 14 mΩ (VGS = 10 V) RDS(ON) ≤ 18 |
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NXP |
Transistor very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications. PHB55N03T QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETE |
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NXP |
N-channel TrenchMOS transistor Logic level FET • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance • Logic level compatible PHP55N03LT, PHB55N03LT PHD55N03LT QUICK REFERENCE DATA d SYMBOL VDSS = 25 V ID = 55 A RDS(ON) ≤ 14 mΩ (VGS = 10 V) RDS(ON) ≤ 18 |
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NXP |
N-channel enhancement mode field-effect transistor s Low on-state resistance s Fast switching. 3. Applications s Computer motherboard high frequency DC to DC converters. 4. Pinning information Table 1: Pinning - SOT78, SOT404, SOT428 simplified outline and symbol Simplified outline mb mb mb Pin Desc |
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NXP |
TrenchMOS transistor Standard level FET very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications. PHP55N03T QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETE |
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NXP |
N-Channel MOSFET s Low on-state resistance s Fast switching. 3. Applications s Computer motherboard high frequency DC to DC converters. 4. Pinning information Table 1: Pinning - SOT78, SOT404, SOT428 simplified outline and symbol Simplified outline mb mb mb Pin Desc |
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NXP |
N-Channel MOSFET • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance • Logic level compatible PHP55N03LT, PHB55N03LT PHD55N03LT QUICK REFERENCE DATA d SYMBOL VDSS = 25 V ID = 55 A RDS(ON) ≤ 14 mΩ (VGS = 10 V) RDS(ON) ≤ 18 |
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NXP |
Airfast RF Power GaN Amplifier and benefits • High terminal impedances for optimal broadband performance • Improved linearized error vector magnitude with next generation signal • Able to withstand extremely high output VSWR and broadband operating conditions • Designed for low co |
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Desde 2024. D4U Semiconductor.
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