No. | parte # | Fabricante | Descripción | Hoja de Datos |
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NXP |
Amplifier Transistors |
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NXP |
NPN general purpose transistor High current Low voltage 1.3 Applications General-purpose switching and amplification 1.4 Quick reference data Table 2. Symbol VCEO IC ICM hFE Quick reference data Parameter Conditions collector-emitter voltage collector current (DC) op |
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NXP |
NPN general purpose transistor High current Low voltage 1.3 Applications General-purpose switching and amplification 1.4 Quick reference data Table 2. Symbol VCEO IC ICM hFE Quick reference data Parameter Conditions collector-emitter voltage collector current (DC) op |
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NXP |
Battery cell controller • 9.6 V ≤ VPWR ≤ 63 V operation, 75 V transient • 7 to 14 cells management • Isolated 2.0 Mbps differential communication or 4.0 Mbps SPI • Addressable on initialization • 0.8 mV maximum total voltage measurement error • Synchronized cell voltage/cur |
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NXP |
Battery cell controller • 5.0 V ≤ VPWR ≤ 30 V operation, 40 V transient • 3 to 6 cells management • Isolated 2.0 Mbps differential communication or 4.0 Mbps SPI • Addressable on initialization • Synchronized cell voltage/current measurement with Coulomb count • Total stack |
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NXP |
500mA NPN general-purpose transistors High current Low voltage 1.3 Applications General-purpose switching and amplification 1.4 Quick reference data Table 2. Symbol VCEO IC ICM hFE Quick reference data Parameter Conditions collector-emitter voltage collector current (DC) op |
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NXP |
NPN general purpose transistor High current Low voltage 1.3 Applications General-purpose switching and amplification 1.4 Quick reference data Table 2. Symbol VCEO IC ICM hFE Quick reference data Parameter Conditions collector-emitter voltage collector current (DC) op |
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NXP |
Distributed System Interface (DSI) • Conforms to DSI specification version 1 • 4-channel, 8-Bit analog-to-digital converter (ADC) • 4 pins configurable as analog or logic inputs or as logic outputs • Provides regulated +5.0 V output for sensor power from bus • Additional high-drive lo |
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NXP |
Battery cell controller • 5.0 V ≤ VPWR ≤ 30 V operation, 40 V transient • 3 to 6 cells management • 0.8 mV total cell voltage measurement error • Isolated 2.0 Mbps differential communication or 4.0 Mbps SPI • Addressable on initialization • Synchronized cell voltage/current |
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NXP |
Switch Mode Power-Supply • Provides all regulated voltages for Freescale 32-bit microcontroller family • Adjustable frequency switching buck regulator with slew-rate control • Power sequencing provided • Programmable voltages VDDL, VDD3 - 3% accuracy • Programmable standby r |
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NXP |
Battery cell controller • 9.6 V ≤ VPWR ≤ 63 V operation, 75 V transient • 7 to 14 cells management • Isolated 2.0 Mbps differential communication or 4.0 Mbps SPI • Addressable on initialization • Bi-directional transceiver to support up to 63 nodes in daisy chain • 0.8 mV m |
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NXP |
Battery cell controller • 9.6 V ≤ VPWR ≤ 63 V operation, 75 V transient • 7 to 14 cells management • Isolated 2.0 Mbps differential communication or 4.0 Mbps SPI • Addressable on initialization • 0.8 mV maximum total voltage measurement error • Synchronized cell voltage/cur |
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NXP |
Battery cell controller • 9.6 V ≤ VPWR ≤ 63 V operation, 75 V transient • 7 to 14 cells management • Isolated 2.0 Mbps differential communication or 4.0 Mbps SPI • Addressable on initialization • 0.8 mV maximum total voltage measurement error • Synchronized cell voltage/cur |
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NXP |
Battery cell controller • 9.6 V ≤ VPWR ≤ 63 V operation, 75 V transient • 7 to 14 cells management • Isolated 2.0 Mbps differential communication or 4.0 Mbps SPI • Addressable on initialization • 0.8 mV maximum total voltage measurement error • Synchronized cell voltage/cur |
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NXP |
Battery cell controller • 5.0 V ≤ VPWR ≤ 30 V operation, 40 V transient • 3 to 6 cells management • Isolated 2.0 Mbps differential communication or 4.0 Mbps SPI • Addressable on initialization • Synchronized cell voltage/current measurement with Coulomb count • Total stack |
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NXP |
NPN general purpose transistor • Low current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification, e.g. driver and output stages of audio amplifiers. 1 handbook, halfpage JC337 PINNING PIN 1 2 3 base collector emitter DESCRIPTION DE |
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NXP |
Amplifier Transistors |
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NXP |
500mA NPN general-purpose transistors |
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NXP |
Battery cell controller • 9.6 V ≤ VPWR ≤ 63 V operation, 75 V transient • 7 to 14 cells management • Isolated 2.0 Mbps differential communication or 4.0 Mbps SPI • Addressable on initialization • 0.8 mV maximum total voltage measurement error • Synchronized cell voltage/cur |
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NXP |
Battery cell controller • 9.6 V ≤ VPWR ≤ 63 V operation, 75 V transient • 7 to 14 cells management • Isolated 2.0 Mbps differential communication or 4.0 Mbps SPI • Addressable on initialization • 0.8 mV maximum total voltage measurement error • Synchronized cell voltage/cur |
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