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NXP |
NPN switching transistor • Low current (max. 200 mA) • Low voltage (max. 40 V). APPLICATIONS • High-speed switching. DESCRIPTION NPN switching transistor in a TO-92; SOT54 plastic package. PNP complement: 2N3906. PINNING PIN 1 2 3 collector base emitter 2N3904 DESCRIPTION |
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NXP |
N-channel J-FET |
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NXP |
PNP switching transistor • Low current (max. 200 mA) • Low voltage (max. 40 V). APPLICATIONS • High-speed switching in industrial applications. DESCRIPTION PNP switching transistor in a TO-92; SOT54 plastic package. NPN complement: 2N3904. PINNING PIN 1 2 3 collector base em |
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NXP |
Silicon planar epitaxial overlay transistors 1 1 Gp (dB) >10 >10 η (%) >45 >50 collector current (DC) average collector current total power dissipation transition frequency junction temperature measured over any 20 ms period up to Tmb = 25 °C IC = 50 mA; VCE = 15 V; f = 200 MHz open collector − |
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NXP |
NPN medium power transistor • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Amplifier and switching circuits. DESCRIPTION NPN medium power transistor in a TO-39 metal package. 1 handbook, halfpage 2 2N3019 PINNING PIN 1 2 3 emitter base collector, connected |
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NXP |
(2N3924 - 2N3927) Silicon Epitaxial Planar Overlay Transistors |
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NXP |
Silicon planar epitaxial overlay transistor f (MHz) 175 VCE (V) 28 Po (W) 2.5 Gp (dB) >10 η (%) >50 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle |
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NXP |
(2N3924 - 2N3927) Silicon Epitaxial Planar Overlay Transistors |
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NXP |
(2N3924 - 2N3927) Silicon Epitaxial Planar Overlay Transistors |
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Desde 2024. D4U Semiconductor.
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