No. | parte # | Fabricante | Descripción | Hoja de Datos |
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NXP |
Silicon Diffused Power Transistor improved RBSOA performance and is suitable for operation up to 64 kHz. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Col |
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NXP |
BU2527AF improved RBSOA performance and is suitable for operation up to 64 kHz. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Col |
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NXP |
Fault-tolerant CAN transceiver Optimized for in-car low-speed communication • Baud rate up to 125 kBaud • Up to 15 nodes can be connected • Supports unshielded bus wires • Low RFI due to built-in slope control function • Fully integrated receiver filters. Bus failure management • |
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NXP |
Silicon Diffused Power Transistor O IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse |
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NXP |
Silicon Diffused Power Transistor cordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak va |
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NXP |
Silicon Diffused Power Transistor improved RBSOA performance and is suitable for use in horizontal deflection circuits of pc monitors. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open |
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NXP |
Silicon Diffused Power Transistor SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base |
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NXP Semiconductors |
(IP4251 - IP4254) passive filter network I Pb-free, Restriction of the use of certain Hazardous Substances (RoHS) and dark green compliant I 4-, 6- and 8-channel integrated π-type RC filter network I IP4251CZ8/CZ12/CZ16: 100 Ω channel series resistance, 10 pF (at 2.5 V DC) channel capacitanc |
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NXP |
PNP video transistors • High breakdown voltages • Low output capacitance • Optimum temperature profile • Excellent reliability properties. APPLICATIONS • Buffer/driver in high-resolution colour graphics monitors. PIN 1 2 3 DESCRIPTION emitter collector base DESCRIPTION PN |
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NXP |
Silicon Diffused Power Transistor olute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) |
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NXP |
Photo flash LED driver and benefits High power single or dual LED output driving up to 500 mA flash current Separate indicator LED output of 2.5 mA to 10 mA High side current source for main and indicator LEDs Output voltage of up to 8.85 V Wide input voltage ran |
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NXP |
Rectifier diodes schottky barrier SM PARAMETER CONDITIONS MIN. -20 20 20 20 30 43 30 180 200 MAX. -25 25 25 25 UNIT V V V A A A A A Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Tmb ≤ 109 ˚C Average output current (both diodes conducting) R |
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NXP |
Rectifier diodes schottky barrier SM PARAMETER CONDITIONS MIN. -20 20 20 20 30 43 30 180 200 MAX. -25 25 25 25 UNIT V V V A A A A A Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Tmb ≤ 109 ˚C Average output current (both diodes conducting) R |
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NXP |
Threshold detector and reset generator • Very low current consumption, typically 10 µA • 10 factory programmed threshold voltages available covering trip voltages from 4.75 to 2.55 V • ±50 mV trip point accuracy over full temperature range • Variable RESET delay • RESET pulse polarity sel |
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NXP |
PNP video transistors • High breakdown voltages • Low output capacitance • Optimum temperature profile • Excellent reliability properties. APPLICATIONS • Buffer/driver in high-resolution colour graphics monitors. PIN 1 2 3 DESCRIPTION emitter collector base DESCRIPTION PN |
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NXP |
Line twenty-one acquisition and display LITOD • Complete ‘stand-alone’ Line 21 decoder in one package • On-chip display RAM allowing full page Text mode • Enhanced character display modes • Full colour captions • RGB interface for standard colour decoder ICs • Automatic handling of Field 2 data |
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NXP |
Silicon Diffused Power Transistor SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base |
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NXP |
Silicon Diffused Power Transistor with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base |
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NXP |
Silicon Diffused Power Transistor improved RBSOA performance and is suitable for operation up to 64 kHz. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Col |
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NXP |
Silicon Diffused Power Transistor improved RBSOA performance and is suitable for use in horizontal deflection circuits of pc monitors. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open ba |
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