| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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NXP |
Schottky barrier diodes • Low switching losses • Fast recovery time • Guard ring protected • Hermetically sealed leaded glass package. APPLICATIONS • Low power, switched-mode power supplies • Rectifying • Polarity protection. handbook, 4 columns 1N5817; 1N5818; 1N5819 DESC |
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NXP |
Voltage regulator diodes • Total power dissipation: max. 500 mW • Tolerance series: ±5% • Working voltage range: nom. 3.0 to 75 V • Non-repetitive peak reverse power dissipation: max. 40 W. handbook, halfpage 1N5225B to 1N5267B DESCRIPTION Low-power voltage regulator diode |
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NXP |
Voltage regulator diodes • Total power dissipation: max. 500 mW • Tolerance series: ±5% • Working voltage range: nom. 3.0 to 75 V • Non-repetitive peak reverse power dissipation: max. 40 W. handbook, halfpage 1N5225B to 1N5267B DESCRIPTION Low-power voltage regulator diode |
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NXP |
Controlled avalanche rectifiers • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • Available in ammo-pack. DESCRIPTION 1N5059 to 1N5062 Rugged glass package, using a high temper |
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NXP |
Voltage regulator diodes • Total power dissipation: max. 500 mW • Tolerance series: ±5% • Working voltage range: nom. 3.0 to 75 V • Non-repetitive peak reverse power dissipation: max. 40 W. handbook, halfpage 1N5225B to 1N5267B DESCRIPTION Low-power voltage regulator diode |
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NXP |
Voltage regulator diodes • Total power dissipation: max. 500 mW • Tolerance series: ±5% • Working voltage range: nom. 3.0 to 75 V • Non-repetitive peak reverse power dissipation: max. 40 W. handbook, halfpage 1N5225B to 1N5267B DESCRIPTION Low-power voltage regulator diode |
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NXP |
PowerMOS transistors Avalanche energy rated • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHB11N50E, PHW11N50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V g ID = 10.9 A RDS(ON) ≤ 0.55 Ω s GENERAL |
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NXP |
Schottky barrier diodes • Low switching losses • Fast recovery time • Guard ring protected • Hermetically sealed leaded glass package. APPLICATIONS • Low power, switched-mode power supplies • Rectifying • Polarity protection. handbook, 4 columns 1N5817; 1N5818; 1N5819 DESC |
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NXP |
Voltage regulator diodes • Total power dissipation: max. 500 mW • Tolerance series: ±5% • Working voltage range: nom. 3.0 to 75 V • Non-repetitive peak reverse power dissipation: max. 40 W. handbook, halfpage 1N5225B to 1N5267B DESCRIPTION Low-power voltage regulator diode |
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NXP |
Voltage regulator diodes • Total power dissipation: max. 500 mW • Tolerance series: ±5% • Working voltage range: nom. 3.0 to 75 V • Non-repetitive peak reverse power dissipation: max. 40 W. handbook, halfpage 1N5225B to 1N5267B DESCRIPTION Low-power voltage regulator diode |
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NXP |
Voltage regulator diodes • Total power dissipation: max. 500 mW • Tolerance series: ±5% • Working voltage range: nom. 3.0 to 75 V • Non-repetitive peak reverse power dissipation: max. 40 W. handbook, halfpage 1N5225B to 1N5267B DESCRIPTION Low-power voltage regulator diode |
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NXP |
Controlled avalanche rectifiers • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • Available in ammo-pack. DESCRIPTION 1N5059 to 1N5062 Rugged glass package, using a high temper |
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NXP |
Controlled avalanche rectifiers • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • Available in ammo-pack. DESCRIPTION 1N5059 to 1N5062 Rugged glass package, using a high temper |
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NXP |
Controlled avalanche rectifiers • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • Available in ammo-pack. DESCRIPTION 1N5059 to 1N5062 Rugged glass package, using a high temper |
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NXP |
Voltage regulator diodes • Total power dissipation: max. 500 mW • Tolerance series: ±5% • Working voltage range: nom. 3.0 to 75 V • Non-repetitive peak reverse power dissipation: max. 40 W. handbook, halfpage 1N5225B to 1N5267B DESCRIPTION Low-power voltage regulator diode |
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NXP |
Voltage regulator diodes • Total power dissipation: max. 500 mW • Tolerance series: ±5% • Working voltage range: nom. 3.0 to 75 V • Non-repetitive peak reverse power dissipation: max. 40 W. handbook, halfpage 1N5225B to 1N5267B DESCRIPTION Low-power voltage regulator diode |
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NXP |
Voltage regulator diodes • Total power dissipation: max. 500 mW • Tolerance series: ±5% • Working voltage range: nom. 3.0 to 75 V • Non-repetitive peak reverse power dissipation: max. 40 W. handbook, halfpage 1N5225B to 1N5267B DESCRIPTION Low-power voltage regulator diode |
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NXP |
PowerMOS transistors Avalanche energy rated • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHB11N50E, PHW11N50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V g ID = 10.9 A RDS(ON) ≤ 0.55 Ω s GENERAL |
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NXP |
PowerMOS transistors Avalanche energy rated • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHP11N50E, PHB11N50E, PHW11N50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V g ID = 10.4 A RDS(ON) ≤ 0.6 Ω |
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NXP |
Voltage regulator diodes • Total power dissipation: max. 500 mW • Tolerance series: ±5% • Working voltage range: nom. 3.0 to 75 V • Non-repetitive peak reverse power dissipation: max. 40 W. handbook, halfpage 1N5225B to 1N5267B DESCRIPTION Low-power voltage regulator diode |
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Desde 2024. D4U Semiconductor.
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