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Pan Jit International |
NPN GENERAL PURPOSE SWITCHING TRANSISTOR • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • Both normal and Pb free product are available : Normal : 80~95% Sn, 5~20% Pb Pb free: 98.5% Sn above .087(2.2) .070(1.8) .054(1.35) .045(1 |
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Pan Jit International |
PNP GENERAL PURPOSE SWITCHING TRANSISTOR • PNP epitaxial silicon, planar design • Collector-emitter voltage VCE = -40V • Collector current IC = -200mA • Lead free in compliance with EU RoHS 2011/65/EU directive • Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA • |
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Pan Jit International |
NPN GENERAL PURPOSE SWITCHING TRANSISTOR • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 600mA • In compliance with EU RoHS 2002/95/EC directives .119(3.00) .110(2.80) Unit: inch (mm) .007(.20)MIN .103(2.60) .086(2.20) .056(1.40) .04 |
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Pan Jit International |
SURFACE MOUNT SWITCHING DIODES • Dual, common cathode configuration • Very fast reverse recovery ( Trr< 2.0ns typical ) • Low capacitance ( < 2.5pF @ 0V) • Surface mount package ideally suited for anuomatic insetion • Lead free in comply with EU RoHS 2002/95/EC directives. • Green |
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Pan Jit International |
PNP GENERAL PURPOSE SWITCHING TRANSISTOR PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -40V Collector current IC =-600mA Complimentary (NPN) device: MMBT4401 Lead free in comply with EU RoHS 2002/95/EC directives. Green molding compound as per IEC61249 Std. . (Hal |
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Pan Jit International |
PNP GENERAL PURPOSE SWITCHING TRANSISTOR 0.042(1.05) 0.037(0.95) 0.026(0.65) 0.022(0.55) • PNP epitaxial silicon, planar design • Collector-emitter voltage VCE = -40V • Collector current IC = -200mA • Lead free in compliance with EU RoHS 2011/65/EU directive • Green molding compound as p |
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Pan Jit International |
HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE • Fast Switching Speed • Surface Mount Package ldeally Suited for Automatic Insertion • High Conductance • High Reverse Breakdown Voltage Rating • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA Case: SOT-23, Plastic Terminals: Sold |
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Pan Jit International |
HIGH VOLTAGE TRANSISTOR • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case : SOT-23 plastic case. • Terminals : Solderable per MIL-STD-750,Method 2026 • Standard packaging : 8mm tape • Weight : approximately 0.008gram • Marking : M5A MAXIMUM RATINGS |
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Pan Jit International |
SURFACE MOUNT SWITCHING DIODES • Very fast reverse recovery ( trr < 2.0 ns typical ) • Low capacitance ( < 2.5pF @ 0V ) • Surface mount package ideally suited for automatic insertion. • Pb free product are available : 99% Sn above can meet RoHS environment substance directive requ |
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Pan Jit International |
SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE • Low Capacitance,Minimizing Insertion Losses in VHF Applications • Low VF : 0.5V (Typ) at IF=10mA • Extremely Fast Switching Speed • Lead free in comply with EU RoHS 2002/95/EC directives. • Green molding compound as per IEC61249 Std. . (Halogen Fre |
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Pan Jit International |
SURFACE MOUNT SCHOTTKY DIODE • Extremely low minority carrier lifetime • Low capacitance (0.4pF @ 20V typical) • Low reverse leakage (30nA @ 35V typical) • Surface mount package ideally suited for automatic insertion • Lead free in comply with EU RoHS 2002/95/EC directives. • Gr |
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Pan Jit International |
NPN GENERAL PURPOSE SWITCHING TRANSISTOR 0.042(1.05) 0.037(0.95) 0.026(0.65) 0.021(0.55) • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • In compliance with EU RoHS 2002/95/EC directives Unit : inch(mm) 0.022(0.55) 0.047(0.45 |
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Pan Jit International |
PNP GENERAL PURPOSE SWITCHING TRANSISTOR • PNP epitaxial silicon, planar design • Collector-emitter voltage VCE = -40V • Collector current IC = -200mA • Both normal and Pb free product are available : Normal : 80~95% Sn, 5~20% Pb Pb free: 98.5% Sn above .056(1.40) .047(1.20) .119(3.00) . |
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NTE |
Silicon NPN Transistor . . . . . . . . . . . . . . . . . . . . . . . . 225mW 1.8mW/C Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 556C/mW Total PDowerearteDiAsbsiopvaetio2n5(CTA. = +25C |
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NTE |
Silicon NPN Transistor . . . . . . . . . . . . . . . . . . . . . . . 350mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/C Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . |
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NTE |
Silicon NPN Transistor . . . . . . . . . . . . . . . . . . 350mW Derate above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/C Thermal Resistance, Junction−to−Ambient (Note 3), RthJA . . . . . . . . . . |
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Pan Jit International |
SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE • Low Capacitance,Minimizing Insertion Losses in VHF Applications • Low VF : 0.5V (Typ) at IF=10mA • Extremely Fast Switching Speed • Lead free in comply with EU RoHS 2002/95/EC directives. • Green molding compound as per IEC61249 Std. . (Halogen Fre |
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Pan Jit International |
SURFACE MOUNT SWITCHING DIODES • Fast switching Speed. • Electrically ldentical to Standerd JEDEC • Surface Mount Package ldeally Suited for Automatic lnsertion. • Pb free product are available : 99% Sn above can meet RoHS environment substance directive request MECHANICAL DATA C |
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Pan Jit International |
SURFACE MOUNT SWITCHING DIODES • Fast switching Speed. • Electrically ldentical to Standerd JEDEC • Surface Mount Package ldeally Suited for Automatic lnsertion. • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA Case : SOD-723 plastic case. Terminals : Solderable |
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Pan Jit International |
PNP GENERAL PURPOSE SWITCHING TRANSISTOR PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -40V Collector current IC =-600mA Complimentary (NPN) device: MMBT4401W In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA Case: SOT-323 Terminals: Solderable per MIL- |
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Desde 2024. D4U Semiconductor.
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