NTE 1N5 Hoja de datos

No.	parte #	Fabricante	Descripción
1	1N5937B	Pan Jit International Inc.	GLASS PASSIVATED JUNCTION SILICON ZENER DIODE l Low profile package l Built-in strain relief l l l l l Glass passivated junction Low inductance Typical IR less than 1 £g A above 11V High temperature soldering : 260 ¢J /10 seconds at terminals Plastic package has Underwriters Laboratory Flammabil
2	1N5938B	Pan Jit International Inc.	GLASS PASSIVATED JUNCTION SILICON ZENER DIODE l Low profile package l Built-in strain relief l l l l l Glass passivated junction Low inductance Typical IR less than 1 £g A above 11V High temperature soldering : 260 ¢J /10 seconds at terminals Plastic package has Underwriters Laboratory Flammabil
3	1N5939B	Pan Jit International Inc.	GLASS PASSIVATED JUNCTION SILICON ZENER DIODE l Low profile package l Built-in strain relief l l l l l Glass passivated junction Low inductance Typical IR less than 1 £g A above 11V High temperature soldering : 260 ¢J /10 seconds at terminals Plastic package has Underwriters Laboratory Flammabil
4	1N5942B	Pan Jit International Inc.	GLASS PASSIVATED JUNCTION SILICON ZENER DIODE l Low profile package l Built-in strain relief l l l l l Glass passivated junction Low inductance Typical IR less than 1 £g A above 11V High temperature soldering : 260 ¢J /10 seconds at terminals Plastic package has Underwriters Laboratory Flammabil
5	1N5928B	Pan Jit International Inc.	GLASS PASSIVATED JUNCTION SILICON ZENER DIODE l Low profile package l Built-in strain relief l l l l l Glass passivated junction Low inductance Typical IR less than 1 £g A above 11V High temperature soldering : 260 ¢J /10 seconds at terminals Plastic package has Underwriters Laboratory Flammabil
6	1N5940B	Pan Jit International Inc.	GLASS PASSIVATED JUNCTION SILICON ZENER DIODE l Low profile package l Built-in strain relief l l l l l Glass passivated junction Low inductance Typical IR less than 1 £g A above 11V High temperature soldering : 260 ¢J /10 seconds at terminals Plastic package has Underwriters Laboratory Flammabil
7	1N5349B	NTE	Zener Diode D Zener Voltage: 3.3V to 200V D High Surge Current Capability Absolute Maximum Ratings: DC PowDeerraDteisAsibpoavtieon75(TCL = . +75C, ....... Lead ..... Length = ........ .3./8. .”).,.P. D. . . . . . . . . . . . . . . . . . . .
8	1N5349B	Pan Jit International Inc.	GLASS PASSIVATED JUNCTION SILICON ZENER DIODE • Built-in strain relief • Glass passivated junction • Low inductance • Typical IR less than 5.0µA above 11V • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • High temperature soldering : 260°C /10 seconds at terminals
9	1N5403	NTE	Axial Lead Standard Recovery Silicon Rectifiers D 3 Amp Operation at TA = +75°C with no Thermal Runaway D High Current Capability D Low Leakage Absolute Maximum Ratings: (TA = +25°C unless otherwise specified, Note 1) Peak Repetitive Reverse Voltage, DC Reverse Voltage, 1N5400 . . . . . .V.R
10	1N5551	Vishay	Standard Sinterglass Diode • Cavity-free glass passivated junction • High temperature metallurgically bonded con- struction • Hermetically sealed package • Medium switching for improved efficiency Mechanical Data Case: Sintered glass case, G4 Terminals: Solder plated axial lea
11	VAS073501N5	Yantel	Miniature Variable Attenuator n Using advanced microstrip technology, ultra-small size n Attenuation values are adjustable in a power-on state, no sudden big reflection. It adopts an innovative technology, and thus it eliminates sudden big reflection in attenuators when attenuati
12	1N5404	NTE	Axial Lead Standard Recovery Silicon Rectifiers D 3 Amp Operation at TA = +75°C with no Thermal Runaway D High Current Capability D Low Leakage Absolute Maximum Ratings: (TA = +25°C unless otherwise specified, Note 1) Peak Repetitive Reverse Voltage, DC Reverse Voltage, 1N5400 . . . . . .V.R
13	1N5381B	NTE	Zener Diode D Zener Voltage: 3.3V to 200V D High Surge Current Capability Absolute Maximum Ratings: DC PowDeerraDteisAsibpoavtieon75(TCL = . +75C, ....... Lead ..... Length = ........ .3./8. .”).,.P. D. . . . . . . . . . . . . . . . . . . .
14	1N5378B	NTE	Zener Diode D Zener Voltage: 3.3V to 200V D High Surge Current Capability Absolute Maximum Ratings: DC PowDeerraDteisAsibpoavtieon75(TCL = . +75C, ....... Lead ..... Length = ........ .3./8. .”).,.P. D. . . . . . . . . . . . . . . . . . . .
15	1N5363B	NTE	Zener Diode D Zener Voltage: 3.3V to 200V D High Surge Current Capability Absolute Maximum Ratings: DC PowDeerraDteisAsibpoavtieon75(TCL = . +75C, ....... Lead ..... Length = ........ .3./8. .”).,.P. D. . . . . . . . . . . . . . . . . . . .
16	1N5348B	NTE	Zener Diode D Zener Voltage: 3.3V to 200V D High Surge Current Capability Absolute Maximum Ratings: DC PowDeerraDteisAsibpoavtieon75(TCL = . +75C, ....... Lead ..... Length = ........ .3./8. .”).,.P. D. . . . . . . . . . . . . . . . . . . .
17	1N5345B	NTE	Zener Diode D Zener Voltage: 3.3V to 200V D High Surge Current Capability Absolute Maximum Ratings: DC PowDeerraDteisAsibpoavtieon75(TCL = . +75C, ....... Lead ..... Length = ........ .3./8. .”).,.P. D. . . . . . . . . . . . . . . . . . . .
18	1N5343B	NTE	Zener Diode D Zener Voltage: 3.3V to 200V D High Surge Current Capability Absolute Maximum Ratings: DC PowDeerraDteisAsibpoavtieon75(TCL = . +75C, ....... Lead ..... Length = ........ .3./8. .”).,.P. D. . . . . . . . . . . . . . . . . . . .
19	IRFP31N50L	International Rectifier	Power MOSFET 3.7 ± 30 19 -55 to + 150 300 10 lbf •in (1.1N •m) Units A W W/°C V V/ns www.DataSheet4U.com °C Diode Characteristics Symbol IS ISM VSD trr Qrr IRRM ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode F
20	1N5408	NTE	Axial Lead Standard Recovery Silicon Rectifiers D 3 Amp Operation at TA = +75°C with no Thermal Runaway D High Current Capability D Low Leakage Absolute Maximum Ratings: (TA = +25°C unless otherwise specified, Note 1) Peak Repetitive Reverse Voltage, DC Reverse Voltage, 1N5400 . . . . . .V.R