| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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NJS |
N-Channel FET 1 25'C) Gate-source breakdown voltage Drain-source short-circuit current (Vbs=15V,VGs-0) Gate-source voltage Gate-source pinch-off voltage (V/bs-16V,/D=10nA) -/ess -/QSS £5 £500 '^BfllGSS 230 BF245A: /oss BF245B: /DSS BF245C: /OSS 2.0 to 6.5 6t |
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NJS |
N-Channel FET 1 25'C) Gate-source breakdown voltage Drain-source short-circuit current (Vbs=15V,VGs-0) Gate-source voltage Gate-source pinch-off voltage (V/bs-16V,/D=10nA) -/ess -/QSS £5 £500 '^BfllGSS 230 BF245A: /oss BF245B: /DSS BF245C: /OSS 2.0 to 6.5 6t |
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NJS |
N-Channel FET 1 25'C) Gate-source breakdown voltage Drain-source short-circuit current (Vbs=15V,VGs-0) Gate-source voltage Gate-source pinch-off voltage (V/bs-16V,/D=10nA) -/ess -/QSS £5 £500 '^BfllGSS 230 BF245A: /oss BF245B: /DSS BF245C: /OSS 2.0 to 6.5 6t |
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NJS |
N-Channel FET 1 25'C) Gate-source breakdown voltage Drain-source short-circuit current (Vbs=15V,VGs-0) Gate-source voltage Gate-source pinch-off voltage (V/bs-16V,/D=10nA) -/ess -/QSS £5 £500 '^BfllGSS 230 BF245A: /oss BF245B: /DSS BF245C: /OSS 2.0 to 6.5 6t |
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Desde 2024. D4U Semiconductor.
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