| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Toshiba Semiconductor |
(2SK2545) N-Channel MOSFET usly under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating tem |
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NEC |
N-Channel FET |
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Sinopower |
N-Channel MOSFET · 30V/50A, RDS(ON)=8.4mW (max.) @ VGS=10V RDS(ON)=12.6mW (max.) @ VGS=4.5V · Reliable and Rugged · Lead Free and Green Devices Available (RoHS Compliant) ® N-Channel Enhancement Mode MOSFET Pin Description DDDD S S SG DFN5x6-8 D (5, 6) Pin 1 App |
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SONY |
Silicon N-Channel FET |
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Toshiba |
N-Channel Transistor |
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Inchange Semiconductor |
N-Channel MOSFET Transistor 5℃) SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward on-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current Ciss Input Cap |
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Toshiba |
Silicon N-Channel MOSFET |
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Panasonic |
GaAs N-Channel MES FET |
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Inchange Semiconductor |
N-Channel MOSFET Transistor D= 1mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=8A VSD Diode Forward Voltage IF= 15A; VGS= 0 IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=500V; VGS= 0 2SK725 MIN TYP. MAX UNIT 5 |
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Inchange Semiconductor |
N-Channel MOSFET Transistor TRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(th) Gate Threshold Voltage VDS=25 V; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 5A IGSS Gate Source Lea |
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Inchange Semiconductor |
N-Channel MOSFET Transistor oltage Drain Current VDS=60V; VGS= 0 VSD Diode Forward Voltage IF=25A; VGS=0 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=15A;RL=2Ω toff Turn-off time 2SK1346 MIN TYP MAX UNIT 60 V 1.5 3.5 V 0.04 0.06 Ω ±100 nA 300 u |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET ut capacitance Reverse transfer capacitance IDSS IGSS V (BR) DSS VDS (ON) VGS (OFF) |Yfs| Ciss Coss Crss VDS = 200 V, VGS = 0 VDS = 0V, VGS = ±20 V ID = 10 mA, VGS = 0 ID = 8 A, VGS = 10 V VDS = 10 V, ID = 0.1 A VDS = 10 V, ID = 5 A VDS = 30 V, VGS |
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Fuji Electric |
N-CHANNEL SILICON POWER MOS-FET |
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NEC |
N-Channel MOSFET • Low On-Resistance RDS(on) = 7.5 Ω (VGS = 10 V, ID = 2.0 A) 6.0 MAX. • Low Ciss Ciss = 485 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain C |
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Toshiba Semiconductor |
N-Channel MOSFET |
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Fuji Electric |
N-Channel Silicon Power MOS-FET |
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Inchange Semiconductor |
N-Channel MOSFET Transistor VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current Ciss Input capacitance Crss Reverse transfer capacitance Coss Output capacitance tr Rise time ton Turn-o |
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Toshiba Semiconductor |
N-Channel MOSFET Drain efficiency Power gain Low voltage output power Symbol IDSS IGSS Vth VDS (ON) Yfs Ciss Coss PO hD GP POL Test Condition VDS = 20 V, VGS = 0 V VGS = 10 V VDS = 7.2 V, ID = 2 mA VGS = 10 V, ID = 75 mA VDS = 7.2 V, IDS = 1 A VDS = 7.2 V, VGS = 0 V, |
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Fuji Electric |
N-CHANNEL SILICON POWER MOSFET High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Outline Drawings [mm] TO-220F Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characterist |
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Inchange Semiconductor |
N-Channel MOSFET Transistor DS= 0 IDSS Zero Gate Voltage Drain Current VDS=360V; VGS= 0 VSD Diode Forward Voltage IF= 5A; VGS=0 2SK350 MIN TYP MAX UNIT 450 V 1.0 5.0 V 0.67 0.90 Ω ±1 uA 1 mA 0.85 V NOTICE： ISC reserves the rights to make changes of the con |
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Desde 2024. D4U Semiconductor.
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