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NEC |
UPA1601 |
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NEC |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. PACKAGE DRAWING (Unit : mm) 0.32 +0.1 –0.05 0.65 –0.15 +0.1 0.16+0.1 –0.06 2.8 ±0.2 6 5 4 1. |
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NEC |
UPA1436AH • • • • Easy mount by 0.1 inch of terminal interval. High hFE for Darlington Transistor. High Speed Switching. C-E Reverce Diode built in. 10 2.54 ORDERING INFORMATION Part Number Package 10 Pin SIP Quality Grade Standard 1.4 0.6 ±0.2 1.4 0.5 |
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NEC |
SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE • Dual chip type • Low on-resistance RDS(on)1 = 47.0 mΩ MAX. (VGS = 10 V, ID = 2.3 A) RDS(on)2 = 57.0 mΩ MAX. (VGS = 4.5 V, ID = 2.3 A) RDS(on)3 = 66.0 mΩ MAX. (VGS = 4.0 V, ID = 2.3 A) • Low input capacitance Ciss = 870 pF TYP. • Built-in G-S protec |
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NEC |
NPN silicon epitaxial power transistor array |
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NEC |
N-CHANNEL POWER MOS FET |
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NEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 8 PACKAGE DRAWING (Unit : mm) 5 1, 5, 8 : Drain 2, 3, 6, 7: Source 4 : Gate 1.2 MAX. 1.0±0.05 0. |
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NEC |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. PACKAGE DRAWING (Unit : mm) 0.32 +0.1 –0.05 0.65 –0.15 +0.1 0.16+0.1 –0.06 2.8 ±0.2 6 5 4 1. |
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NEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 8 PACKAGE DRAWING (Unit: mm) 5 1 2, 3 4 5 6, 7 8 :Drain1 :Source1 :Gate1 :Gate2 :Source2 :Drain2 |
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NEC |
HIGH FREQUENCY NPN TRANSISTOR ARRAY • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: (Each Transistor has fT 9 GHz) • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA102B: Superior thermal dissipation due to studded 14-pin ceramic package µPA102G: Reduced circuit size due to 14-pin |
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NEC |
N-CHANNEL POWER MOSFET ARRAY • Full mold package with 4 circuits • 4 V driving is possible • Low on-state resistance RDS(on)1 = 165 mΩ MAX. (VGS = 10 V, ID = 1.5 A) RDS(on)2 = 200 mΩ MAX. (VGS = 4 V, ID = 1.5 A) • Low input capacitance Ciss = 600 pF TYP. 2.54 1.4 0.6±0.1 1 2 3 |
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NEC |
SWITCHING N-CHANNEL POWER MOSFET • 2.5-V gate drive and low on-resistance 1.44 RDS(on)1 = 13 mΩ MAX. (VGS = 4.0 V, ID = 5.0 A) 1.8 MAX. 1 5.37 MAX. 4 6.0 ±0.3 4.4 +0.10 –0.05 RDS(on)2 = 16 mΩ MAX. (VGS = 2.5 V, ID = 5.0 A) • Low Ciss : Ciss = 2700 pF TYP. • Built-in G-S protect |
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NEC |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE • Low on-resistance RDS(on)1 = 9.3 mΩ (TYP.) (VGS = 10 V, ID = 4.5 A) RDS(on)2 = 13.8 mΩ (TYP.) (VGS = 4.5 V, ID = 4.5 A) • Low Ciss : Ciss = 1850 pF (TYP.) • Built-in G-S protection diode • Small and surface mount package (Power SOP8) PACKAGE DRAWI |
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NEC |
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE • Low on-resistance RDS(on)1 = 8.5 mΩ TYP. (VGS = –10 V, ID = –6.0 A) RDS(on)2 = 11.0 mΩ TYP. (VGS = –4.5 V, ID = –6.0 A) RDS(on)3 = 12.0 mΩ TYP. (VGS = –4.0 V, ID = –6.0 A) • Low Ciss : Ciss = 3800 pF TYP. • Built-in G-S protection diode • Small and |
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NEC |
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE • Low on-resistance RDS(on)1 = 12.5 mΩ TYP. (VGS = –10 V, ID = –4 A) RDS(on)2 = 17.0 mΩ TYP. (VGS = –4.5 V, ID = –4 A) RDS(on)3 = 19.0 mΩ TYP. (VGS = –4.0 V, ID = –4 A) • Low Ciss : Ciss = 2100 pF TYP. • Built-in G-S protection diode • Small and surf |
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NEC |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE • 2.5-V gate drive and low on-resistance 1.8 MAX. • Built-in G-S protection diode • Small and surface mount package (Power SOP8) 0.05 MIN. • Low Ciss : Ciss = 950 pF TYP. 0.15 • RDS(on)3 = 30.0 mΩ MAX. (VGS = 2.5 V, ID = 3.5 A) +0.10 –0.05 • |
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NEC |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE • Single chip type • Low On-state Resistance 1.44 5 5 5 5 RDS(on)1 = 14 mΩ (TYP.) (VGS = 10 V, ID = 5.0 A) RDS(on)2 = 17 mΩ (TYP.) (VGS = 4.5 V, ID = 5.0 A) RDS(on)3 = 19 mΩ (TYP.) (VGS = 4.0 V, ID = 5.0 A) • Low Ciss : Ciss = 2400 pF (TYP.) • Buil |
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NEC |
SWITCHING N-AND P-CHANNEL POWER MOS FET INDUSTRIAL USE • Dual chip type • Low on-resistance N-Channel RDS(on)1 = 0.12 Ω TYP. (VGS = 10 V, ID = 0.5 A) 1.44 1.8 MAX. 1 5.37 MAX. +0.10 –0.05 P-Channel 4 6.0 ±0.3 4.4 0.8 RDS(on)2 = 0.19 Ω TYP. (VGS = 4 V, ID = 0.5 A) P-Channel RDS(on)1 = 0.45 Ω TYP. (VGS |
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NEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 8 PACKAGE DRAWING (Unit : mm) 5 1, 5, 8 : Drain 2, 3, 6, 7: Source 4 : Gate 1.2 MAX. 1.0±0.05 0. |
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NEC |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 8 PACKAGE DRAWING (Unit : mm) 5 1 2, 3 4 5 6, 7 8 :Drain1 :Source1 :Gate1 :Gate2 :Source2 :Drain2 |
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Desde 2024. D4U Semiconductor.
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