NEC K82 Hoja de datos

No.	parte #	Fabricante	Descripción
1	K822	NEC	N-Channel MOS Field Effect Power Transistor
2	K821	NEC	2SK821
3	K827	NEC	2SK827
4	K825	NEC	2SK825
5	2SK822	NEC	N-Channel MOS Field Effect Power Transistor
6	AXK820145V	NAIS	Narrow Pitch Connectors 1. A 0.4 mm pitch and stacking height of 1.5 mm allow for extra compactness and helps design lighter, thinner, shorter, and smaller devices. 2. High impact-resistant construction. 1) Adoption of bellows-type contacts structure. The roll surfaces are
7	2SK823	NEC	N-channel Silicon MOSFET
8	2SK827	NEC	N-Channel Silicon Power MOSFET
9	2SK821	NEC	FAST SWITCHING N-CHANNEL SILICON POWER MOSFET
10	2SK825	NEC	FAST SWITCHING N-CHANNEL SILICON POWER MOSFET
11	2SK829	NEC	FAST SWITCHING N-CHANNEL SILICON POWER MOSFET
12	AXK820145J	NAIS	Narrow Pitch Connectors 1. A 0.4 mm pitch and stacking height of 1.5 mm allow for extra compactness and helps design lighter, thinner, shorter, and smaller devices. 2. High impact-resistant construction. 1) Adoption of bellows-type contacts structure. The roll surfaces are
13	AXK824145J	NAIS	Narrow Pitch Connectors 1. A 0.4 mm pitch and stacking height of 1.5 mm allow for extra compactness and helps design lighter, thinner, shorter, and smaller devices. 2. High impact-resistant construction. 1) Adoption of bellows-type contacts structure. The roll surfaces are
14	AXK826145J	NAIS	Narrow Pitch Connectors 1. A 0.4 mm pitch and stacking height of 1.5 mm allow for extra compactness and helps design lighter, thinner, shorter, and smaller devices. 2. High impact-resistant construction. 1) Adoption of bellows-type contacts structure. The roll surfaces are
15	AXK824145V	NAIS	Narrow Pitch Connectors 1. A 0.4 mm pitch and stacking height of 1.5 mm allow for extra compactness and helps design lighter, thinner, shorter, and smaller devices. 2. High impact-resistant construction. 1) Adoption of bellows-type contacts structure. The roll surfaces are
16	AXK826145V	NAIS	Narrow Pitch Connectors 1. A 0.4 mm pitch and stacking height of 1.5 mm allow for extra compactness and helps design lighter, thinner, shorter, and smaller devices. 2. High impact-resistant construction. 1) Adoption of bellows-type contacts structure. The roll surfaces are