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2SK3455 a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply, AC adapter. ORDERING INFORMATION PART NUMBER 2SK3455 PACKAGE Isolated TO-220 FEATURES •Low gate charge QG = 30 nC TYP. |
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NEC |
2SK3435 • Super low on-state resistance: RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 40 A) 5 RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 40 A) • Built-in gate protection diode 5 • Low Ciss: Ciss = 3200 pF TYP. (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain |
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NEC |
2SK3454 a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. ORDERING INFORMATION PART NUMBER PACKAGE 2SK3454 Isolated TO-220 FEATURES •Gate voltage rating ±30 V •Low on- |
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NEC |
SWITCHING N-CHANNEL POWER MOSFET • Super low on-state resistance: RDS(on)1 = 50 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 58 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Low Ciss: Ciss = 2300 pF TYP. • Built-in gate protection diode Note TO-220SMD package is produced only in Japan. (TO-220A |
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NEC |
N-Channel MOSFET • Super low on-state resistance: RDS(on)1 = 26 mΩ MAX. (VGS = 10 V, ID = 20 A) 5 RDS(on)2 = 41 mΩ MAX. (VGS = 4.0 V, ID = 20 A) • Low Ciss: Ciss = 1500 pF TYP. • Built-in gate protection diode (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain t |
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NEC |
2SK3483 • Low on-state resistance RDS(on)1 = 52 mΩ MAX. (VGS = 10 V, ID = 14 A) RDS(on)2 = 59 mΩ MAX. (VGS = 4.5 V, ID = 14 A) • Low Ciss: Ciss = 2300 pF TYP. • Built-in gate protection diode • TO-251/TO-252 package (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 2 |
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NEC |
N-Channel MOSFET a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of dynamic clamp of relay and so on. PACKAGE DRAWING (Unit : mm) 0.4 +0.1 –0.05 0.16+0.1 –0.06 0.65 –0.15 +0.1 2.8 ±0.2 3 1. |
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NEC |
SWITCHING N-CHANNEL POWER MOSFET a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. ORDERING INFORMATION PART NUMBER 2SK3467 2SK3467-ZK PACKAGE TO-220AB TO-263(MP- |
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NEC |
SWITCHING N-CHANNEL POWER MOSFET a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. ORDERING INFORMATION PART NUMBER 2SK3405 2SK3405-ZK 2SK3405-ZJ PACKAGE TO-220AB |
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NEC |
2SK3405 a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. ORDERING INFORMATION PART NUMBER 2SK3405 2SK3405-ZK 2SK3405-ZJ PACKAGE TO-220AB |
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NEC |
SWITCHING N-CHANNEL POWER MOSFET • Low On-State Resistance RDS(on)1 = 15 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 18 A) • Low Ciss : Ciss = 3200 pF TYP. • Built-in Gate Protection Diode • TO-251/TO-252 package (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = |
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NEC |
2SK3484 • Low on-state resistance RDS(on)1 = 125 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 148 mΩ MAX. (VGS = 4.5 V, ID = 8 A) • Low Ciss: Ciss = 900 pF TYP. • Built-in gate protection diode • TO-251/TO-252 package (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25 |
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NEC |
N-CHANNEL POWER MOSFET a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5 V drive available • Low on-state resistance RDS(on)1 = 11.5 mΩ MA |
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NEC |
N-Channel MOSFET • Super low on-state resistance: 5 5 RDS(on)1 = 7.3 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 15 mΩ MAX. (VGS = 4 V, ID = 40 A) • Built-in gate protection diode (TO-220AB) 5 • Low Ciss: Ciss = 2800 pF TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Dra |
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N-Channel MOSFET • Super low on-state resistance: RDS(on)1 = 5.6 mΩ MAX. (VGS = 10 V, ID = 42 A) 5 RDS(on)2 = 8.9 mΩ MAX. (VGS = 4 V, ID = 42 A) • Built-in gate protection diode 5 • Low Ciss: Ciss = 6100 pF TYP. (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain |
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N-Channel MOSFET • Super low on-state resistance: 5 5 RDS(on)1 = 4.0 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 6.9 mΩ MAX. (VGS = 4 V, ID = 42 A) • Low Ciss: Ciss = 9500 pF TYP. • Built-in gate protection diode (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain |
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NEC |
N-Channel MOSFET • Super low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = 10 V, ID = 24 A) RDS(on)2 = 31 mΩ MAX. (VGS = 4.0 V, ID = 24 A) • Low Ciss: Ciss = 2100 pF TYP. • Built-in gate protection diode ORDERING INFORMATION PART NUMBER 2SK3434 2SK3434-S 2SK3434 |
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NEC |
SWITCHING N-CHANNEL POWER MOSFET • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 42 A) • Low Ciss: Ciss = 11000 pF TYP. • Built-in gate protection diode Note TO-220SMD package is produced only in Japan. (TO-220 |
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NEC |
SWITCHING N-CHANNEL POWER MOSFET a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. ORDERING INFORMATION PART NUMBER 2SK3454 PACKAGE Isolated TO-220 FEATURES •Gate voltage rating ±30 V •Low on-stat |
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NEC |
2SK3467 a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. ORDERING INFORMATION PART NUMBER 2SK3467 2SK3467-ZK PACKAGE TO-220AB TO-263(MP- |
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Desde 2024. D4U Semiconductor.
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