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NEC |
2SK1398 • Directly driven by ICs having a 3-V power supply. • Not necessary to consider driving current because of its high input impedance. • Possible to reduce the number of parts by omitting the bias resistor. • Can be used complementary with the 2SJ184. |
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NEC |
MOS FIELD EFFECT TRANSISTOR • Suitable for use as RF amplifier in VHF TV tuner. • Low Crss : 0.05 pF TYP. • High Gps : 23 dB TYP. • Low NF : 1.3 dB TYP. PACKAGE DIMENSIONS (Unit: mm) 0.4 −0.05 0.4 −0.05 0.4 −0.05 0.16 −0.06 +0.1 2.8 −0.3 1.5 2 +0.2 +0.1 +0.1 +0.2 −0.1 Dra |
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NEC |
N-Channel MOSFET • Directly driven by ICs having a 3-V power supply. • Not necessary to consider driving current because of its high input impedance. • Possible to reduce the number of parts by omitting the bias resistor. • Can be used complementary with the 2SJ184. |
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NEC |
N-Channel MOSFET • Can be driven by a 3.0-V power source • Not necessary to consider driving current because of it is high input impedance • Possible to reduce the number of parts by omitting the bias resistor • Can be used complementary with the 2SJ185 0.95 1 3 |
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NEC |
RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD • High Power Gain : • Low Noise Figure : Gps = 23.0 dB TYP. (@ = 900 MHz) NF = 2.4 dB TYP. (@ = 900 MHz) PACKAGE DIMENSIONS (Unit : mm) 2.8 +0.2 – 0.3 0.4 +0.1 – 0.05 • Suitable for use as RF amplifier in UHF TV tuner. • Automatically Mounting : • |
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NEC |
RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD • Suitable for use as RF amplifier in UHF TV tuner. • Low Crss : 0.02 pF TYP. • High Gps : 18 dB TYP. • Low NF : 2.7 dB TYP. PACKAGE DIMENSIONS in millimeters 0.4+0.1 –0.05 2 2.8+0.2 –0.3 1.5+0.2 –0.1 –0.06 0.16 +0.1 Drain to Source Voltage Gate1 |
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Assmann |
Connector |
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Desde 2024. D4U Semiconductor.
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