| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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NEC TOKIN |
MOLDED CHIP TANTALUM CAPACITOR e, please don’t use it for other purposes. Also, please don’t duplicate the specification, nor open the contents of it to third parties without permission of NEC TOKIN Corp. • NEC TOKIN does not assume any liability for infringement of patents, copyr |
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NEC |
NPN SILICON EPITAXIAL TRANSISTOR power dissipation PT (Ta = 25°C) 2.0 W Junction temperature Storage temperature Tj 150 °C Tstg −55 to +150 °C * PW ≤ 10 ms, duty cycle ≤ 50% PACKAGE DRAWING (UNIT: mm) Electrode Connection 1. Base (B) 2. Collector (C) 3. Emitter (E) The |
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NEC TOKIN |
MOLDED CHIP TANTALUM CAPACITOR e, please don’t use it for other purposes. Also, please don’t duplicate the specification, nor open the contents of it to third parties without permission of NEC TOKIN Corp. • NEC TOKIN does not assume any liability for infringement of patents, copyr |
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NEC TOKIN |
MOLDED CHIP TANTALUM CAPACITOR e, please don’t use it for other purposes. Also, please don’t duplicate the specification, nor open the contents of it to third parties without permission of NEC TOKIN Corp. • NEC TOKIN does not assume any liability for infringement of patents, copyr |
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NEC |
Zener Diode 1981 RD2.0E to RD200E ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) Zener Voltage VZ (V)Note 1 MIN. B RD2.0E B1 B2 B RD2.2E B1 B2 B RD2.4E B1 B2 B RD2.7E B1 B2 B RD3.0E B1 B2 B RD3.3E B1 B2 B RD3.6E B1 B2 B RD3.9E B1 B2 B RD4.3E B1 B2 B3 B RD4.7E B1 B2 B |
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NEC |
ZENER DIODES • DHD (Double Heatsink Diode) Construction • Planar process • VZ: Applied E24 standard • DO-41 Glass sealed package φ 3.0 MAX. Circuits for, Constant Voltage, Constant Current, Wave form clipper, Surge absorber, etc. MAXIMUM RATINGS (TA = 25°C) Pow |
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NEC |
ZENER DIODES • Sharp Breakdown characteristic. • Vz: Applied E24 standard. (in millimeters) 2.5±0.15 1.7±0.1 APPLICATIONS Circuit for Constant Voltage, Constant Current, Wave form Clipper, Surge absorber, etc. 0.19 Cathode Indication ABSOLUTE MAXIMUM RATING |
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NEC |
ZENER DIODES • Sharp Breakdown characteristics • VZ ; Applied E24 standard APPLICATIONS Circuits for Constant Voltage, Constant Current, Waveform clipper, Surge absorber, etc. 0.15 0.11+0.05 –0.01 0.7±0.1 Cathode Indication MAXIMUM RATINGS (TA = 25 °C) Power |
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NEC |
CROSSPOINT SWITCH µPD22100 µPD22148 • 4 × 4 CROSSPOINT SWITCHES • INTERNAL POWER ON RESET FUNCTION • Low ON-RESISTANCE 60 Ω Typ. (VDD = 15 V) • 4 × 8 CROSSPOINT SWITCHES • Including the Level Shifter Circuit • Low ON-RESISTANCE 60 Ω Typ. (VDD = 15 V) • Wide operati |
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NEC |
NPN SILICON EPITAXIAL TRANSISTOR power dissipation PT (Ta = 25°C) 2.0 W Junction temperature Storage temperature Tj 150 °C Tstg −55 to +150 °C * PW ≤ 10 ms, duty cycle ≤ 50% PACKAGE DRAWING (UNIT: mm) Electrode Connection 1. Base (B) 2. Collector (C) 3. Emitter (E) The |
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NEC |
ZENER DIODES • Low Noise • Sharp Breakdown characteristic. • Vz: Applied E24 standard. PACKAGE DIMENSIONS (in millimeters) 2.5±0.15 1.7±0.1 Cathode Indication APPLICATIONS Circuits for Constant Voltage, Constant Current, Waveform Clipper, Surge absorber, etc. |
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NEC |
NPN Silicon Epitaxial Transistor |
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NEC TOKIN |
MOLDED CHIP TANTALUM CAPACITOR e, please don’t use it for other purposes. Also, please don’t duplicate the specification, nor open the contents of it to third parties without permission of NEC TOKIN Corp. • NEC TOKIN does not assume any liability for infringement of patents, copyr |
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NEC TOKIN |
MOLDED CHIP TANTALUM CAPACITOR e, please don’t use it for other purposes. Also, please don’t duplicate the specification, nor open the contents of it to third parties without permission of NEC TOKIN Corp. • NEC TOKIN does not assume any liability for infringement of patents, copyr |
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NEC |
Zener Diode • DO-34 Glass sealed package This diode can be inserted into a PC board with a shorter pitch (5 mm) 5 mm Cathode indication 25 MIN. φ 2.0 MAX. 25 MIN. • Planar process • DHD (Double Heatsink Diode) construction • VZ Applied E24 standard ORDERING I |
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NEC |
Zener Diode • DO-34 Glass sealed package • Low noise • Sharp Breakdown characteristic • Vz Applied E24 standard φ 2.0 MAX. Cathode Indication 25 MIN. RD4.7JS to RD39JS with suffix “AB1”, “AB2”, or “AB3” should be applied for orders for suffix “AB”. APPLICATIO |
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NEC |
ZENER DIODES • • Planar process VZ; Applied E24 standard. 0.95 0.95 APPLICATIONS Circuits for, Constant Voltage, Constant Current, Waveform clipper, Surge absorber, etc. 2.9 ± 0.2 2 3 Marking Power Dissipation Forward Current Junction Temperature Storage |
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NEC |
ZENER DIODES • • VZ; Applied E24 standard Surge absorber on either side 1.5 0.65 +0.1 –0.15 0.95 0.95 APPLICATIONS Circuits for Constant Voltage, Constant Current, Wavefore clipper, Surge absorber, ESD Protect circuit, etc. 2.9 ± 0.2 2 3 MAXIMUM RATINGS |
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NEC |
Zener Diode • Low Noise • Sharp Breakdown characteristics • Vz; Applied E24 standard APPLICATIONS Circuits for Constant Voltage, Constant Current, Waveform clipper, Surge absorber, etc. Cathode Indication MAXIMUM RATINGS (TA = 25 °C) Power Dissipation Forward |
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NEC |
CROSSPOINT SWITCH µPD22100 µPD22148 • 4 × 4 CROSSPOINT SWITCHES • INTERNAL POWER ON RESET FUNCTION • Low ON-RESISTANCE 60 Ω Typ. (VDD = 15 V) • 4 × 8 CROSSPOINT SWITCHES • Including the Level Shifter Circuit • Low ON-RESISTANCE 60 Ω Typ. (VDD = 15 V) • Wide operati |
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Desde 2024. D4U Semiconductor.
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