| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
NEC |
2SD1585 |
|
|
|
|
NEC |
ZENER DIODES • Low Noise • Sharp Breakdown characteristic. • Vz: Applied E24 standard. PACKAGE DIMENSIONS (in millimeters) 2.5±0.15 1.7±0.1 Cathode Indication APPLICATIONS Circuits for Constant Voltage, Constant Current, Waveform Clipper, Surge absorber, etc. |
|
|
|
|
NEC |
2SD1592 • High DC current gain due to Darlington connection • Low collector saturation • Reverse deterrence type • Ideal for use in devices such as pulse motor drivers and relay drivers of PC terminals, and ignitors of general-purpose engines. • Mold package |
|
|
|
|
NEC |
500 mW DHD ZENER DIODE DO-35 1981 RD2.0E to RD200E ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) Zener Voltage VZ (V)Note 1 MIN. B RD2.0E B1 B2 B RD2.2E B1 B2 B RD2.4E B1 B2 B RD2.7E B1 B2 B RD3.0E B1 B2 B RD3.3E B1 B2 B RD3.6E B1 B2 B RD3.9E B1 B2 B RD4.3E B1 B2 B3 B RD4.7E B1 B2 B |
|
|
|
|
NEC |
500 mW DHD ZENER DIODE DO-35 1981 RD2.0E to RD200E ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) Zener Voltage VZ (V)Note 1 MIN. B RD2.0E B1 B2 B RD2.2E B1 B2 B RD2.4E B1 B2 B RD2.7E B1 B2 B RD3.0E B1 B2 B RD3.3E B1 B2 B RD3.6E B1 B2 B RD3.9E B1 B2 B RD4.3E B1 B2 B3 B RD4.7E B1 B2 B |
|
|
|
|
NEC |
NPN Silicon Transistor |
|
|
|
|
NEC TOKIN |
MOLDED CHIP TANTALUM CAPACITOR e, please don’t use it for other purposes. Also, please don’t duplicate the specification, nor open the contents of it to third parties without permission of NEC TOKIN Corp. • NEC TOKIN does not assume any liability for infringement of patents, copyr |
|
|
|
|
NEC |
ZENER DIODES 200 mW 2 PINS SUPER MINI MOLD • Sharp Breakdown characteristic. • Vz: Applied E24 standard. (in millimeters) 2.5±0.15 1.7±0.1 APPLICATIONS Circuit for Constant Voltage, Constant Current, Wave form Clipper, Surge absorber, etc. 0.19 Cathode Indication ABSOLUTE MAXIMUM RATING |
|
|
|
|
NEC |
NPN Silicon Epitaxial Transistor |
|
|
|
|
NEC |
NPN Silicon Epitaxial Transistor |
|
|
|
|
NEC |
400 mW DHD ZENER DIODE DO-34 • DO-34 Glass sealed package This diode can be inserted into a PC board with a shorter pitch (5 mm) 5 mm Cathode indication 25 MIN. φ 2.0 MAX. 25 MIN. • Planar process • DHD (Double Heatsink Diode) construction • VZ Applied E24 standard ORDERING I |
|
|
|
|
NEC |
ZENER DIODES 1 W DO-41 GLASS SEALED PACKAGE • DHD (Double Heatsink Diode) Construction • Planar process • VZ: Applied E24 standard • DO-41 Glass sealed package φ 3.0 MAX. Circuits for, Constant Voltage, Constant Current, Wave form clipper, Surge absorber, etc. MAXIMUM RATINGS (TA = 25°C) Pow |
|
|
|
|
NEC |
DO-34 Package Low noise/ Sharp Breakdown characteristics 400 mW Zener Diode • DO-34 Glass sealed package • Low noise • Sharp Breakdown characteristic • Vz Applied E24 standard φ 2.0 MAX. Cathode Indication 25 MIN. RD4.7JS to RD39JS with suffix “AB1”, “AB2”, or “AB3” should be applied for orders for suffix “AB”. APPLICATIO |
|
|
|
|
NEC |
ZENER DIODES 200 mW 3-PIN MINI MOLD • • Planar process VZ; Applied E24 standard. 0.95 0.95 APPLICATIONS Circuits for, Constant Voltage, Constant Current, Waveform clipper, Surge absorber, etc. 2.9 ± 0.2 2 3 Marking Power Dissipation Forward Current Junction Temperature Storage |
|
|
|
|
NEC |
Inductors |
|
|
|
|
NEC |
UPD27C2001D15 com DataSheet 4 U .com www.DataSheet4U.com www.DataSheet4U.com et4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com www.DataSheet4U.com et4U.com DataSheet4U.com DataSheet4U.com DataSheet 4 U .com |
|
|
|
|
NEC |
NPN SILICON EPITAXIAL TRANSISTOR |
|
|
|
|
NEC |
NPN Silicon Transistor |
|
|
|
|
NEC |
transistor |
|
|
|
|
NEC |
2SD1582 |
|
Desde 2024. D4U Semiconductor.
|