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NEC |
NPN SILICON TRANSISTOR • High voltage LVCEO = 50 V MIN. • Excellent hFE linearity hFE1 = (0.1 mA)/hFE2 (1.0 mA) = 0.92 TYP. PACKAGE DRAWING (Unit: mm) φ 5.2 MAX. 5.5 MAX. 12.7 MIN. ABSOLUTE MAXIMUM RATINGS Maximum Temperature Storage Temperature Junction Temperature M |
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NEC |
NPN SILICON TRANSISTOR • High voltage LVCEO = 50 V MIN. • Excellent hFE linearity hFE1 = (0.1 mA)/hFE2 (1.0 mA) = 0.92 TYP. ABSOLUTE MAXIMUM RATINGS Maximum Temperature Storage Temperature Junction Temperature Maximum Power Dissipation (TA = 25°C) Total Power Dissipatio |
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NEC |
NPN Silicon Transistor • High voltage LVCEO = 50 V MIN. • Excellent hFE linearity hFE1 = (0.1 mA)/hFE2 (1.0 mA) = 0.92 TYP. ABSOLUTE MAXIMUM RATINGS Maximum Temperature Storage Temperature Junction Temperature Maximum Power Dissipation (TA = 25°C) Total Power Dissipatio |
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Desde 2024. D4U Semiconductor.
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