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2SK3918 a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 7.5 mΩ MAX. (VGS = 10 V, ID = |
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NEC |
2SK4145 • Low on-state resistance RDS(on) = 10 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 5300 pF TYP. ORDERING INFORMATION PART NUMBER 2SK4145-S19-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tube 50 p/tube PACKAGE TO-220 typ. 1.9 g N |
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NEC |
2SK3053 • Low On-State Resistance RDS(on)1 = 45 mΩ MAX. (VGS = 10 V, ID = 13 A) RDS(on)2 = 70 mΩ MAX. (VGS = 4.0 V, ID = 13 A) • Low Ciss : Ciss = 790 pF TYP. • Built-in Gate Protection Diode • Isolated TO-220 package (Isolated TO-220) ABSOLUTE MAXIMUM RATI |
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NEC |
2SK3377 • Low On-state Resistance 5 5 5 RDS(on)1 = 44 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 78 mΩ MAX. (VGS = 4.0 V, ID = 10 A) • Low Ciss : Ciss = 760 pF TYP. • Built-in Gate Protection Diode • TO-251/TO-252 package (TO-251) ABSOLUTE MAXIMUM RATINGS |
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NEC |
N-Channel FET |
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NEC |
2SK3455 a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply, AC adapter. ORDERING INFORMATION PART NUMBER 2SK3455 PACKAGE Isolated TO-220 FEATURES •Low gate charge QG = 30 nC TYP. |
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NEC |
2SK3435 • Super low on-state resistance: RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 40 A) 5 RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 40 A) • Built-in gate protection diode 5 • Low Ciss: Ciss = 3200 pF TYP. (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain |
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NEC |
2SK2372 • Low On-Resistance 20.0 ± 0.2 1.0 15.7 MAX. 4 3.2 ± 0.2 4.7 MAX. 1.5 7.0 2SK2368: RDS(ON) = 0.27 Ω (VGS = 13 V, ID = 10 A) • Low Ciss Ciss = 3600 pF TYP. • High Avalanche Capability Ratings 1 3.0 ± 0.2 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° |
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NEC |
2SK3919 a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. ORDERING INFORMATION PART NUMBER 2SK3919 2SK3919-ZK PACKAGE TO-251 (MP-3) T |
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NEC |
2SK2370 • Low On-Resistance 2SK2370: RDS(on) = 0.4 Ω (VGS = 10 V, ID = 10 A) 20.0 ± 0.2 • Low Ciss Ciss = 2400 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage(2SAK2369/2370) VDSS Gate to Source Volt |
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NEC |
2SK3114 a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance: RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 2.0 A) • Low gate charge: QG |
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NEC |
2SK3326 a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge : QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A) • Gate voltage rating |
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NEC |
2SK2362 • Low On-Resistance 2SK2361: RDS (on) = 0.9 Ω (VGS = 10 V, ID = 5.0 A) 2SK2362: RDS (on) = 1.0 Ω (VGS = 10 V, ID = 5.0 A) • Low Ciss Ciss = 1050 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Volta |
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NEC |
2SK3057 • Low on-state resistance RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 23 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4 V, ID = 23 A) • Low Ciss: Ciss = 2100 pF TYP. • Built-in gate protection diode • Isolated TO-220 package ORDERING INFORMATION PART NUMBER PACKAG |
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NEC |
N-Channel MOSFET • Low On-Resistance RDS(on) = 7.5 Ω (VGS = 10 V, ID = 2.0 A) 6.0 MAX. • Low Ciss Ciss = 485 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain C |
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NEC |
2SK1851 |
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NEC |
2SK2981 • Low on-resistance RDS(on)1 = 27 mΩ (MAX.) (VGS = 10 V, ID = 10 A) RDS(on)2 = 40 mΩ (MAX.) (VGS = 4.5 V, ID = 10 A) RDS(on)3 = 50 mΩ (MAX.) (VGS = 4 V, ID = 10 A) • Low Ciss : Ciss = 860 pF (TYP.) • Built-in gate protection diode ORDERING INFORMATI |
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NEC |
2SK2364 10.0±0.3 • Low On-Resistance 2SK2363: RDS (on) = 0.5 Ω (VGS = 10 V, ID = 4.0 A) 2SK2364: RDS (on) = 0.6 Ω (VGS = 10 V, ID = 4.0 A) 3.2±0.2 4.5±0.2 2.7±0.2 Drain to Source Voltage (2SK2363/2SK2364) Gate to Source Voltage Drain Current (DC) Drain |
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NEC |
(2SK1497 / 2SK1498) MOS Field Effect Power Transistors |
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NEC |
SWITCHING N-CHANNEL POWER MOSFET |
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Desde 2024. D4U Semiconductor.
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