| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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NEC |
NPN Silicon Power Transistor • Low saturation voltage VCE(sat) = 0.5 V MAX. (IC = −2 A, IB = 0.2 A) • Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = 2 V, IC = 1 A) • Less cramping space required due to small and thin package and reducing the trouble for attachment t |
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NEC |
2SD1694 |
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NEC |
2SD1695 • On-chip protection elements enable time and cost reduction. C to E: Dumper diode C to B: Constant diode • Low collector saturation voltage QUALITY GRADES • Standard DataShee DataSheet4U.com Electrode Connection 1. Emitter 2. Collector 3. Base 4 |
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NEC |
2SD2162 • High hFE due to Darlington connection hFE ≥ 2,000 (VCE = 2.0 V, IC = 3.0 A) • Full mold package that does not require an insulating board or insulation bushing ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collector to base voltage Collector to e |
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NEC |
2SD1585 |
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NEC |
NPN TRANSISTOR • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance |
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NEC |
NPN Silicon Transistor |
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NEC |
2SD414 • Ideal for audio amplifier drivers with 30 W to 50 W output • High voltage • Available for small mount spaces due to small and thin package • Easy to be attached to radiators PACKAGE DRAWING (UNIT: mm) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Paramete |
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NEC |
NPN SILICON DARLINGTON POWER TRANSISTOR |
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NEC |
NPN Transistor • Mold package that does not require an insulating board or insulation bushing • High DC current gain due to Darlington connection hFE = 1,000 MIN. (@IC = 10 A) • Low collector saturation voltage: VCE(sat) = 1.5 V MAX. (@IC = 10 A) ABSOLUTE MAXIMUM |
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NEC |
2SD1592 • High DC current gain due to Darlington connection • Low collector saturation • Reverse deterrence type • Ideal for use in devices such as pulse motor drivers and relay drivers of PC terminals, and ignitors of general-purpose engines. • Mold package |
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NEC |
2SD1312 |
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NEC |
NPN TRANSISTOR |
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NEC |
NPN Silicon Transistor |
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NEC |
NPN Transistor • C-to-E reverse diode inserted • Low collector saturation voltage (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pu |
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NEC |
NPN Transistor • High DC current gain due to Darlington connection • Large current capacity and low VCE(sat) • Large power dissipation TO-126 type power transistor • Complementary transistor: 2SB1149 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Collect |
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NEC |
2SD1698 |
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NEC |
2SD1033 |
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NEC |
2SD773 |
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NEC |
NPN Silicon Transistor |
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Desde 2024. D4U Semiconductor.
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