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NCEPOWER |
N-Channel Enhancement Mode Power MOSFET ● VDS =30V,ID =80A RDS(ON) < 6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat di |
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NCEPOWER |
N-Channel Enhancement Mode Power MOSFET ● VDS =30V,ID =10A RDS(ON) < 13.5mΩ @ VGS=10V RDS(ON) < 20mΩ @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current Schematic diagram Application ● ● ● Power switching application Hard Switched |
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NCEPOWER |
N-Channel Enhancement Mode Power MOSFET ● VDS =30V,ID =50A RDS(ON) < 9mΩ @ VGS=10V RDS(ON) < 15mΩ @ VGS=5V ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat diss |
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NCEPOWER |
N-Channel Enhancement Mode Power MOSFET ● VDS =30V,ID =210A RDS(ON) < 2.5mΩ @ VGS=10V (Typ:1mΩ) ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● S |
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NCEPOWER |
P-Channel Enhancement Mode Power MOSFET ● VDS = -30V,ID = -4.2A RDS(ON) < 70mΩ @ VGS=-4.5V RDS(ON) < 60mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Schematic diagram Marking and pin Assignment Application ●PWM applicat |
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NCEPOWER |
P-Channel Enhancement Mode Power MOSFET ● VDS = -30V,ID = -4.1A RDS(ON) < 87mΩ @ VGS=-4.5V RDS(ON) < 60mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Schematic diagram Marking and pin Assignment Application ●PWM applicat |
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NCEPOWER |
P-Channel Enhancement Mode Power MOSFET ● VDS =-30V,ID =-50A RDS(ON) < 5.5mΩ @ VGS=-10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special p |
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Desde 2024. D4U Semiconductor.
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