| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Multicomp |
NPN Transistor • High temperature performance specified for: Reversed biased SOA with inductive loads. Switching time with inductive loads. Saturation voltages. Leakage currents. Maximum Ratings Rating Collector-Emitter Voltage Collector-Emitter Voltage Collect |
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Multicomp |
Bipolar Transistor s otherwise specified) Parameter Symbol Test Conditions OFF Characteristics (Note 1) Collector - Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current ON Characteristics (Note 1) DC Current Gain Collector - Emitter Saturatio |
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Multicomp |
Bipolar Transistor |
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Multicomp |
Darlington Transistor |
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Multicomp |
SCR Thyristor en) Gate Controlled Turn On Time Critical Rate of Rise of Off State Voltage Symbol Idav, Irav Idrm, Irrm Vtm Igt Vgt Ih Vgd dv/dt Test Conditions VD = 600V , gate open, Tj = +125°C VD = 600V, gate open, Tj = +25°C Tj = +125°C Itm = 50.3A |
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Multicomp |
Bipolar Transistor • High DC Current Gain • Collector-Emitter Sustaining Voltage VCEO(SUS)=100V Min. • Monolithic Construction With Built-in Base-Emitter Shunt Resistors Pin Configuration: 1. Emitter 2. Base 3. Collector Maximum Ratings: Characteristic Collector- |
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Multicomp |
Bipolar Transistor |
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Multicomp |
Darlington Transistor |
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Multicomp |
Bipolar Transistor • Low Saturation Voltage Maximum Ratings: Characteristic Collector-Base Voltage Collector-Emitter Voltage (RBB = 1≤00Ω, VBB = 0) Collector-Emitter Voltage Emitter Base Current Continuous Collector Current (TC% + 106°C) Continuous Base Current (TC% |
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Multicomp |
Transistor • Low Collector Emitter Saturation Voltage : VCE(sat) 1.5V(Max.) @ IC - 3A • Current Gain-bandwidth Product : 5MHz (Min.) @ IC - 0.3A Absolute Maximum Ratings: Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, V |
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Multicomp |
Bipolar Transistor • High DC Current Gain • Collector-Emitter Sustaining Voltage: V = 100V Min • Monolithic Construction with Built-in Base-Emitter Shunt Resistors Absolute Maximum Ratings: Parameters Collector Emitter Voltage Collector-Base Voltage Emitter-Base V |
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Desde 2024. D4U Semiconductor.
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