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Motorola |
Power Field Effect Transistor ID IDM PD TJ, Tstg EAS RθJC RθJA TL CASE 340G –02, STYLE 1 TO –264 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1 MΩ) Gate –Source Voltage — Continuous Gate –Source Voltage — Non –Repetitive ( |
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Motorola |
TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM RθJC RθJA TL CASE 340G –02, STYLE 1 TO –264 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1 MΩ) Gate –Source Voltage — Continuous Gate –Source Voltage — Non –Repetitive (tp ≤ 10 ms) Drain Curre |
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Desde 2024. D4U Semiconductor.
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