No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Motorola |
PNP Silicon Epitaxial Transistor |
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Motorola |
PNP Transistor |
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Motorola |
NPN Silicon Planar Epitaxial Transistor |
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Motorola |
PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT E = 0) Emitter –Base Breakdown Voltage (IE = –100 µAdc, IC = 0) Collector –Base Cutoff Current (VCB = – 200 Vdc, IE = 0) Emitter –Base Cutoff Current (VBE = – 3.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO – 300 – 300 – 5.0 — — — — — – 0.25 – 0.1 |
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Motorola |
HIGH CURRENT PNP SILICON TRANSISTOR 261AA MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Collector –Emitter Voltage Collector –Base Voltage Emitter –Base Voltage Collector Current Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Storage Temperature Range Junction Tempe |
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Motorola |
NPN Silicon Planar Epitaxial Transistor |
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Motorola Inc |
SOT-223 PACKAGE PNP SILICON TRANSISTOR |
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Motorola |
High Voltage Transistor |
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Motorola |
NPN Transistor |
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Motorola |
High Voltage Transistor age (IC = –100 µAdc, IE = 0) V(BR)CBO – 450 — Vdc Emitter –Base Breakdown Voltage (IE = –10 µAdc, IC = 0) V(BR)EBO – 5.0 — Vdc Collector –Base Cutoff Current (VCB = – 400 Vdc, IE = 0) ICBO — – 0.1 µAdc Emitter –Base Cutoff Current (VBE = – |
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