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Motorola |
AMPLIFIER TRANSISTORS |
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Motorola |
Power Field Effect Transistor |
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Motorola |
AMPLIFIER TRANSISTORS |
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Motorola |
AMPLIFIER TRANSISTORS |
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Motorola |
Power MOSFET |
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Motorola |
Power MOSFET |
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Motorola Inc |
Amplifier Transistors 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0, TA = 150°C) Emitter Cutoff Current (VEB = 3.0 |
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Motorola |
ONE WATT AMPLIFIER TRANSISTORS |
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Motorola |
ONE WATT AMPLIFIER TRANSISTORS |
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Motorola |
ONE WATT AMPLIFIER TRANSISTORS |
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Motorola |
VOLTAGE CLAMPED CURRENT LIMITING MOSFET current limiting for short circuit protection, integrated Gate –Source clamping for ESD protection and integral Gate –Drain clamping for over –voltage protection and Sensefet technology for low on –resistance. No additional gate series resistance is requ |
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Motorola Inc |
Amplifier Transistor (IC = –10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector Cutoff Current (VCE = –30 Vdc, VEB(off) = –0.5 Vdc) Collector Cutoff Current (VCB = –50 Vdc, IE = 0) (VCB = –50 Vdc, IE = 0, TA = 150°C) Emitter Cutoff Curren |
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Motorola |
POWER FIELD EFFECT TRANSISTOR |
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Motorola |
TMOS POWER FET st Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature G S ™ Data Sheet MTP2N60E Motorola Preferred Device TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS ® D CASE 221 |
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Motorola |
AMPLIFIER TRANSISTORS |
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Motorola |
ONE WATT AMPLIFIER TRANSISTORS |
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Motorola |
Power Field Effect Transistor |
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Motorola |
TMOS POWER FET st Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature G S Symbol VDSS VDGR VGS VGSM ID ID IDM PD TJ, Tstg EAS RθJC RθJA TL ™ Data Sheet MTP2N40E Motorola Preferred Device TMOS P |
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Motorola |
Power MOSFET st Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature G S Symbol VDSS VDGR VGS VGSM ID ID IDM PD TJ, Tstg EAS RθJC RθJA TL ™ Data Sheet MTP2N50E Motorola Preferred Device TMOS P |
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Desde 2024. D4U Semiconductor.
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