Motorola MMD Hoja de datos

No.	parte #	Fabricante	Descripción
1	MMDF2C02HD	Motorola	Dual MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain –to –source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low vo
2	MMDF1N05E	Motorola	DUAL MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain –to –source diode has a low reverse recovery time. MiniMOS devices are designed for use in low voltage
3	MMDF3207	Motorola	Dual MOSFET drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. • Ultra Low RDS(on) Provides Higher Efficiency and Extends Ba
4	MMDJ3N03BJT	Motorola	DUAL BIPOLAR POWER TRANSISTOR NPN SILICON 30 VOLTS 3 AMPERES ÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ
5	MMDF2C02E	Motorola	Dual MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain –to –source diode has a low reverse recovery time. MiniMOS devices are designed for use in low voltage
6	MMDF2C03HD	Motorola	Dual MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low vo
7	MMDF2N02E	Motorola	Dual MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain –to –source diode has a low reverse recovery time. MiniMOS devices are designed for use in low voltage
8	MMDF2P02E	Motorola	Dual MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain –to –source diode has a low reverse recovery time. MiniMOS devices are designed for use in low voltage
9	MMDF3N03HD	Motorola	Dual MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain –to –source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low vo
10	MMDF3P03HD	Motorola	Dual MOSFET High Speed, With Soft Recovery IDSS Specified at Elevated Temperature Mounting Information for SO –8 Package Provided DUAL TMOS POWER MOSFET 30 VOLTS RDS(on) = 100 mW ™ D CASE 751 –05, Style 11 SO –8 G S Source –1 Gate –1 Source –2 Gate –2 1 2 3 4 8 7
11	MMDF2C01HD	Motorola	Dual MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain –to –source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low vo
12	MMDF2N05ZR2	Motorola	Dual MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain –to –source diode has a very low reverse recovery time. EZFET devices are designed for use in low volt
13	MMDF2N06V	Motorola	Dual MOSFET of TMOS V • On –resistance Area Product about One –half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E –FET Predecessors G S MMDF2N06V DUAL TMOS MOSFET 3.3 AMPERES 60 VOLTS RDS(on) = 0.115 OHM TM D CA
14	MMDF2N06VL	Motorola	Dual MOSFET of TMOS V • On –resistance Area Product about One –half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E –FET Predecessors G S MMDF2N06VL DUAL TMOS MOSFET 2.5 AMPERES 60 VOLTS RDS(on) = 0.130 OHM TM D
15	MMDF2P01HD	Motorola	Dual MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain –to –source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low vo
16	MMDF2P02HD	Motorola	Dual MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain –to –source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low vo
17	MMDF3200Z	Motorola	Dual MOSFET d tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. • Zener Protected Gates Provide Electrostatic Discharg
18	MMDF3C03HD	Motorola	Dual MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain –to –source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low vo
19	MMDF3N02HD	Motorola	Dual MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain –to –source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low vo
20	MMDF3N04HD	Motorola	Dual MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain –to –source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low vo