No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Motorola |
Internally Clamped / N-Channel IGBT Gate –Emitter ESD protection, Gate –Collector overvoltage protection from SMARTDISCRETES™ monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate –Drain Clamp Limits Stress Applied to Load • Integrated ESD Diode Protect |
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Motorola |
MGP20N40CL Gate –Emitter ESD protection, Gate –Collector overvoltage protection from SMARTDISCRETES™ monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate –Drain Clamp Limits Stress Applied to Load • Integrated ESD Diode Protect |
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Motorola |
Insulated Gate Bipolar Transistor Current (1) Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Resistance — Junction to Case – IGBT — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for |
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Motorola |
Insulated Gate Bipolar Transistor Current (1) Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Resistance — Junction to Case – IGBT — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for |
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Motorola |
Insulated Gate Bipolar Transistor °C 600 VOLTS SHORT CIRCUIT RATED LOW ON –VOLTAGE C G C G E CASE 221A –09 TO –220AB E MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector –Emitter Voltage Collector –Gate Voltage (RGE = 1.0 MΩ) Gate –Emitter Voltage — Continuous Collecto |
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Motorola |
Internally Clamped N-Channel IGBT Gate –Emitter ESD protection, Gate Collector Over – Voltage Protection from monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate – Collector Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection • Lo |
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Motorola |
Insulated Gate Bipolar Transistor 5°C 600 VOLTS SHORT CIRCUIT RATED LOW ON –VOLTAGE C G C G E CASE 221A –06 TO –220AB E MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector –Emitter Voltage Collector –Gate Voltage (RGE = 1.0 MΩ) Gate –Emitter Voltage — Continuous Collect |
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Motorola |
Insulated Gate Bipolar Transistor °C 600 VOLTS SHORT CIRCUIT RATED LOW ON –VOLTAGE C G C G E CASE 221A –06 TO –220AB E MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector –Emitter Voltage Collector –Gate Voltage (RGE = 1.0 MΩ) Gate –Emitter Voltage — Continuous Collecto |
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Motorola |
SMARTDISCRETES Internally Clamped / N-Channel IGBT Gate –Emitter ESD protection, Gate –Collector overvoltage protection from SMARTDISCRETES ™ monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate –Drain Clamp Limits Stress Applied to Load • Integrated ESD Diode Protec |
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Motorola |
SMARTDISCRETES Internally Clamped / N-Channel IGBT Gate –Emitter ESD protection, Gate –Collector overvoltage protection from SMARTDISCRETES™ monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate –Drain Clamp Limits Stress Applied to Load • Integrated ESD Diode Protect |
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Motorola |
Insulated Gate Bipolar Transistor 5°C 600 VOLTS SHORT CIRCUIT RATED LOW ON –VOLTAGE C G C G E CASE 221A –06 TO –220AB E MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector –Emitter Voltage Collector –Gate Voltage (RGE = 1.0 MΩ) Gate –Emitter Voltage — Continuous Collect |
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Motorola |
Insulated Gate Bipolar Transistor |
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Motorola |
Insulated Gate Bipolar Transistor 5°C 600 VOLTS SHORT CIRCUIT RATED LOW ON –VOLTAGE C G C G E CASE 221A –06 TO –220AB E MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector –Emitter Voltage Collector –Gate Voltage (RGE = 1.0 MΩ) Gate –Emitter Voltage — Continuous Collect |
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Motorola |
Insulated Gate Bipolar Transistor |
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Motorola |
Internally Clamped N-Channel IGBT Gate –Emitter ESD protection, Gate Collector Over – Voltage Protection from monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate – Collector Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection • Lo |
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Motorola |
Insulated Gate Bipolar Transistor |
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