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Motorola MCM DataSheet

No. parte # Fabricante Descripción Hoja de Datos
1
MCM6064

Motorola Semiconductor
8K x 8-Bit CMOS SRAM
Datasheet
2
MCM63P733A

Motorola
128K x 32 Bit Pipelined BurstRAM Synchronous Fast Static RAM
eliminates complex off
  –chip write pulse generation and provides increased timing flexibility for incoming signals. Synchronous byte write (SBx), synchronous global write (SGW), and synchronous write enable (SW) are provided to allow writes to either
Datasheet
3
MCM44F64

Motorola
1MB R4000 Secondary Cache Fast Static RAM Module Set
Information for Details) Word Line Sizes of 4, 8, 16, and 32 are Available (See Ordering Information for Details) The Pin Compatible MCM44256 Series is also Available to Support a Full 4MB R4000 Secondary Cache. Decoupling Capacitors are Used for Eac
Datasheet
4
MCM72FB8ML

Motorola
256K x 72 Bit Burst RAM Multichip Module
eliminates complex off
  –chip write pulse generation and provides increased timing flexibility for incoming signals. Synchronous byte write (SBx), synchronous global write (SGW), and synchronous write enable (SW) are provided to allow writes to either
Datasheet
5
MCM6670

Motorola Semiconductor
(MCM6670 / MCM6674) 128c x 7 x 5 Character Generator
Datasheet
6
MCM2716

Motorola
2048 x 8-Bit UV Erasable PROM
Datasheet
7
MCM63F737K

Motorola
(MCM63F737K / MCM63F819K) 128K x 36 and 256K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
eliminates complex off
  –chip write pulse generation and provides increased timing flexibility for incoming signals. Synchronous byte write (SBx), synchronous global write (SGW), and synchronous write enable (SW) are provided to allow writes to either
Datasheet
8
MCM6665A

Motorola
64K DRAM
mW Maximum (Active) (MCM6665A-15) 22 mW Maximum (Standby) Three-State Data Output Internal Latches for Address and Data Input Early-Write Common I/O Capability 16K Compatible 128-Cycle, 2 ms Refresh RAS-only Refresh Mode CAS Controlled Output Upward
Datasheet
9
MCM6726A

Motorola
128K x 8 Bit Fast Static Random Access Memory
that provides increased system flexi- bility and eliminates bus contention problems. This device meets JEDEC standards for functionality and revolutionary pinout, and is available in a 400 mil plastic small-outline J-Ieaded package.
• Single 5 V ± 10
Datasheet
10
MCM44A256B

Motorola
4MB R4000 Secondary Cache Fast Static RAM Module Set
(See Ordering Information for Details)
• Decoupling Capacitors are Used for Each Fast Static RAM and Buffer, Along with Bulk Capacitance for Maximum Noise Immunity
• High Quality Multi
  –Layer FR4 PWB with Separate Power and Ground Planes MCM44256B Se
Datasheet
11
MCM44A64

Motorola
1MB R4000 Secondary Cache Fast Static RAM Module Set
Information for Details) Word Line Sizes of 4, 8, 16, and 32 are Available (See Ordering Information for Details) The Pin Compatible MCM44256 Series is also Available to Support a Full 4MB R4000 Secondary Cache. Decoupling Capacitors are Used for Eac
Datasheet
12
MCM60L256A-C

Motorola
32K x 8 Bit CMOS Static Random Access Memory
Datasheet
13
MCM62110

Motorola
32K x 9 Bit Synchronous Dual I/O or Separate I/O Fast Static RAM with Parity Checker
which allows data to be passed through the RAM between the system and processor ports in either direction. This streaming is accomplished by latching in data from one port and asynchronously output enabling the other port. It is also possible to writ
Datasheet
14
MCM63Z819

Motorola
128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM
Datasheet
15
MCM69F819

Motorola
256K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
eliminates complex off
  –chip write pulse generation and provides increased timing flexibility for incoming signals. Synchronous byte write (SBx), synchronous global write (SGW), and synchronous write enable (SW) are provided to allow writes to either
Datasheet
16
MCM69P618C

Motorola
64K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
eliminates complex off
  –chip write pulse generation and provides increased timing flexibility for incoming signals. Synchronous byte write (SBx), synchronous global write (SGW), and synchronous write enable SW are provided to allow writes to either in
Datasheet
17
MCM514256A

Motorola
256K x 4 CMOS DRAM
CM51L4256A-70 = 440 mW (Max) MCM514256A-80 and MCM51L4256A-80 = 385 mW (Max)
• Low Standby Power Dissipation: MCM514256A and MCM51L4256A = 11 mW (Max), TTL Levels MCM514256A = 5.5 mW (Max), CMOS Levels MCM51L4256A = 1.1 mW (Max), CMOS Levels Order t
Datasheet
18
MCM66714

Motorola Semiconductor
8192-Bit ROM
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Datasheet
19
MCM66740

Motorola Semiconductor
8192-Bit ROM
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Datasheet
20
MCM2814

Motorola Semiconductor
256 X 8-Bit Serial EEPROM
Datasheet



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