| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Motorola |
Dual Schottky Barrier Diodes s. Readily available to many other fast switching RF and digital applications. • Extremely Low Minority Carrier Lifetime • Very Low Capacitance • Low Reverse Leakage MAXIMUM RATINGS Rating Reverse Voltage MBD110DWT1 MBD330DWT1 MBD770DWT1 Symbol VR V |
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Motorola |
HOT-CARRIER DIODE |
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Motorola |
HOT-CARRIER UHF MIXER DIODE |
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Motorola |
SILICON SCHOTTKY BARRIER DIODES ECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µAdc) Diode Capacitance (VR = 0, f = 1.0 MHz, Note 1) Forward Voltage(1) (IF = 10 mAdc) Reverse Leakage (VR = 3.0 Vdc) Symbol V(BR)R CT VF I |
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Motorola |
HIGH-SPEED SWITCHING DIODE |
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Motorola |
Switching Diode • Very Low Leakage (≤ 500 pA) promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair contingent upon the other diode being in a non –forward –biased condition. • Offered in four Surface Mount |
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Motorola |
Schottky Barrier Diodes |
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Motorola |
Switching Diode • Very Low Leakage (≤ 500 pA) promotes extended battery life by decreasing energy waste • Offered in four Surface Mount package types • Available in 8 mm Tape and Reel in quantities of 3,000 Applications • ESD Protection • Reverse Polarity Protectio |
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Motorola |
Schottky Barrier Diodes Motorola, Small –Signal Inc. 1996 1 MMBD110T1 MMBD330T1 MMBD770T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µA) MMBD110T1 MMBD330T1 MMBD770T1 CT MMBD110T1 MMBD330T1 MMBD770T1 IR M |
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Motorola |
Switching Diode • Very Low Leakage (≤ 500 pA) promotes extended battery life by decreasing energy waste • Offered in four Surface Mount package types • Available in 8 mm Tape and Reel in quantities of 3,000 Applications • ESD Protection • Reverse Polarity Protectio |
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Motorola |
Monolithic Dual Switching Diodes Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 µAdc) Reverse Voltage Leakage Current (VR = 30 Vdc) (VR = 50 Vdc) Diode Capacitance (VR = 0 V, f = 1.0 MHz) Forward Voltage (IF = 10 mAdc) Forward Voltage (IF = 50 mAdc) Forward Vol |
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Motorola |
Switching Diode dc) (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) Capacitance (VR = 0 V) 1. FR – 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR) IR VF 0.55 0.85 trr C — — 0.7 1.1 4.0 2.5 ns pF 70 — — 0.1 Vdc µAdc Vdc 0.062 in. |
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Motorola |
Schottky Barrier Diodes Motorola, Small –Signal Inc. 1996 1 MMBD110T1 MMBD330T1 MMBD770T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µA) MMBD110T1 MMBD330T1 MMBD770T1 CT MMBD110T1 MMBD330T1 MMBD770T1 IR M |
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Motorola |
High-Speed Switching Diode (VR = 75 Vdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 10 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) 1. FR – 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR) IR — — CT VF trr — — — 25 5.0 4.0 1.0 4.0 nAdc mAdc pF Vdc ns 10 |
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Motorola |
(MMBD35xLT1) Dual Hot Carrier Mixer Diodes SOT – 23 (TO – 236AB) 1 CATHODE 3 CATHODE/ANODE 2 ANODE MMBD353LT1 CASE 318 – 08, STYLE 19 SOT – 23 (TO – 236AB) DEVICE MARKING MMBD352LT1 = M5G; MMBD353LT1 = M4F; MMBD354LT1 = M6H; MMBD355LT1 = MJ1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless o |
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Motorola |
CARRIER DETECTOR AND SWITCHING DIODES se Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VR PF 280 2.8 TJ – 55 to +125 Tstg – 55 to +150 °C 200 2.0 mW mW/°C °C MMBD701LT1 Value 70 Unit Volts CASE 182 – |
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Motorola |
CARRIER DETECTOR AND SWITCHING DIODES ure Range Storage Temperature Range Symbol VR PF 280 2.8 TJ – 55 to +125 Tstg – 55 to +150 °C CASE 318 – 08, STYLE 8 SOT – 23 (TO – 236AB) 200 2.0 mW mW/°C °C 1 2 3 MMBD701LT1 Value 70 Unit Volts 2 CATHODE 1 ANODE DEVICE MARKING MMBD701LT1 = 5H 3 |
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Motorola |
Dual Schottky Barrier Diode M5 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Forward Voltage (IF = 10 mAdc) Reverse Voltage Leakage Current (VR = 3.0 V) (VR = 7.0 V) Capacitance (VR = 0 V, f = 1.0 MHz) 1. |
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Motorola |
Switching Diode • Very Low Leakage (≤ 500 pA) promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair contingent upon the other diode being in a non –forward –biased condition. • Offered in four Surface Mount |
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Motorola |
Switching Diode • Very Low Leakage (≤ 500 pA) promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair contingent upon the other diode being in a non –forward –biased condition. • Offered in four Surface Mount |
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Desde 2024. D4U Semiconductor.
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