Motorola 740 Hoja de datos

No.	parte #	Fabricante	Descripción
1	7408	Motorola	QUAD 2-INPUT AND GATE C = MIN, IIN = – 18 mA 54 2.5 3.5 74 2.7 3.5 V VCC = MIN, IOH = MAX, VIN = VIH V or VIL per Truth Table VOL Output LOW Voltage 54, 74 74 0.25 0.4 0.35 0.5 V IOL = 4.0 mA V IOL = 8.0 mA VCC = VCC MIN, VIN = VIL or VIH per Truth Table IIH Inpu
2	MCM66740	Motorola Semiconductor	8192-Bit ROM taSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U
3	2N3740A	Motorola	MEDIUM-POWER PNP TRANSISTORS • Low Saturation Voltage - = = VCE(sat) 0.6 Vdc@ IC 1.0 Amp • High Gain Characteristics - hFE = 30-100@ IC = 250 mAdc • Direct Substitution for Germanium Equivalents • Excellent Safe Area Limits (See Figure 2) • Low Collector Cutoff Current - 100 nA
4	MC7402F	Motorola Semiconductor	Quad 2-Input NOR Gate
5	2N740	Motorola	NPN silicon annular transistors .0 Vde, IC = 0) Symbol 2N735, 2N736 2N739, 2N740 2N735, 2N736 2N739, 2N740 BVCEO BVCBO BVEBO ICBO lEBO ON CHARACTERISTICS DC Current Gain (IC = 5.0 mAde, VCE = 5.0 Vde) Collector-Emitter Saturation Voltage (IC = 10 mAde, IB = 2.0 mAde) Base-Emit
6	1N1740A	Motorola	Temperature compensated zener reference diodes (max) Finish: All external surfaces corrosion resistant and leads readily solderable. 1-5 1N429/1 N1530/1 N1735/ 1N4057 (continued) TABLE 1 - ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) TYPE CASE Zener Voltage±5% Vz @ IZT V
7	1N17401	Motorola	Temperature compensated zener reference diodes (max) Finish: All external surfaces corrosion resistant and leads readily solderable. 1-5 1N429/1 N1530/1 N1735/ 1N4057 (continued) TABLE 1 - ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) TYPE CASE Zener Voltage±5% Vz @ IZT V
8	MC7403P	Motorola Semiconductor	Quad 2-Input NAND Gate
9	2N3740	Motorola	MEDIUM-POWER PNP TRANSISTORS • Low Saturation Voltage - = = VCE(sat) 0.6 Vdc@ IC 1.0 Amp • High Gain Characteristics - hFE = 30-100@ IC = 250 mAdc • Direct Substitution for Germanium Equivalents • Excellent Safe Area Limits (See Figure 2) • Low Collector Cutoff Current - 100 nA
10	MJE5740	Motorola	POWER DARLINGTON TRANSISTORS ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ Î
11	MC145740	Motorola	Dual Tone Multiple Frequency Line Interface • • • • • • • Single Power Supply: 3.6 to 5.5 V DTMF Generator and Receiver for All 16 Standard Digits 0 dBm Line Driver Into 600 Ω Load AGC Amplifier Programmable Transmit Attenuator Serial Control Interface Power Down Mode, Less Than 1 µA 20 1
12	MC7403L	Motorola Semiconductor	Quad 2-Input NAND Gate
13	MV7404T1	Motorola	Silicon Hyper-Abrupt Tuning Diode SOT – 223 (TO – 261AA) MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Reverse Voltage Forward Current Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Operating and Storage Temperature Range Lead Temperature for Soldering Purposes,
14	MLL4740	Motorola	GLASS SILICON ZENER DIODES ATE POWER DERATING 1.25 "" ,D~ 1.0 ~ z ~ 0.75 :;t ....... versus TA ill ~ 0.50 "" ""~ £>0.25 " "oo W @ 50 50 m m ~ ~ ~ ~ "T, TEMPERATURE 1°C} IIILLlIIETERS leHES Dill 1111 IIAlI III. IIAlI A 4.80 5.20 0.189 0.205 8 2.44 2.54 0.089 0.100 R 3.71 4.