Motorola 2N2 Hoja de datos

No.	parte #	Fabricante	Descripción
1	2N2369	Motorola	Switching Transistors it OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 10 mA, VBE = 0) Collector – Emitter Sustaining Voltage(1) (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mA, IB = 0) Emitter – Base Breakdown Voltage (IE = 10 mAd
2	2N2846	Motorola	NPN Transistor mAde, 18 " 0) Collector-Base Breakdown Voltage (IC "0,1 mAde, IE " 0) 2N2845, 2N2846 2N2B47,2N2848 Emitter-Base Breakdown Voltage (IE" 0.1 mAde, Ie" 0) Collector-Cutoff Current (VCE " 30 Vde, V8E " 0) Collector Cutoff CUJ:"rent (VC8 " 30 Vde, IE
3	2N222	Motorola	Amplifier Transistors 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0, TA = 150°C) Emitter Cutoff Current (VEB = 3.0
4	2N2492	Motorola	PNP Transistor 0C) 2N2492 (VCE = -50 Vdc, VBE =1.5Vdc,TC=+1000C) 2N2493 -- Collector-Emitter Breakdown Voltage (IC=IA,IB=O) Base - Emitter Voltage (IC = 5Adc, VCE= -2 Vdc) (IC = 12Adc, VCE= -2 Vdc) VCEO 2N2490 50 2N2491 40 2N2492 65 2N2493 75 VBE 2N2490
5	2N2565	Motorola	PNP GERMANIUM MEDIUM POWER TRANSISTORS c Adc mW mW/oC Watts W/oC **Operating and Storage Junction Temperature Range TJ,Tstg - -65 to +100 - - - °c THERMAL CHARACTERISTICS Characteristic Thermal Resistance. Junction to Case illi :molA~ 0.310 DIA Q.lliI [340 0.390 -+ 0.1414 O0..
6	2N2195	Motorola	NPN Transistor pF J7V Scope Input: = R 10 Megohms = C 11.5 pF 2-251 2N2192,A,B thru 2N2195,A,B (continued) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Collector-Base Breakdown Voltage (IC = 100 /lAde, IE = 0) 2N2192, A, B,
7	2N2156	Motorola	PNP germanium power transistors 75 Vdc VEB 25 30 40 Vdc IC 30 Adc PD 170 Watts 0.5 W/oC Operating Junction Temperature Range TJ -65 to + 110 °c THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case °JC 0.5 °C/W 2-24
8	2N2077	Motorola	PNP germanium power transistors Walls at case tem- peratures of 25°C and is 0 Walls at 110°C with a linear relation between the two temperatures such that: = IIOO_Tc allowable P. 0.5 0 o 10 20 30 40 50 60 70 80 90 100 110 Te. CASE TEMPERATURE (OC) 2-239 2N2075 thru 2N20
9	2N2947	Motorola	NPN Transistor Current Symbol Test Conditions ·Min Typ VCES (sJ~\' 2N2947: IC = O. 250 A, RBE = 0 90 120 2N294S: IC = O. 250A, RBE = 0 SO 100 III VCEO(sus) 2N2947: IC = O. 250A, IB = 0 40 -- 2N294S: IC = O. 250A, IB = 0 20 -- ICES 2N2947: VCE = 60 Vdc
10	2N2725	Motorola	NPN Transistor ltage (IE2 = 10 IlAde, IC = 0) Collector Cutoff Current (V CB1 = 60 Vde, IE = 0) (V CB1 = 60 Vde, IE = 0, TA = 150'C) (V CB1 = 30 Vde, IE = 0) (V CB1 =30Vde, IE =0, TA = 150'C) Emitter Cutoff Current (V BlE2 = 10 Vde, IC = 0) (VBlE2 = 6.0 Vde, IC = 0
11	2N2857	Motorola	HIGH FREQUENCY TRANSISTOR
12	2N2646	Motorola	(2N2646 / 2N2647) Silicon PN unijunction transistor
13	2N2907A	Motorola	PNP Silicon Annular Hermetic Transistors
14	2N2096	Motorola	PNP Transistor rating Junction and Storage Temperature Range VEB IC PD PD TJ Tstg 4.0 Vdc 500 mAdc 750 mW 10 mW/oC 300 mW 4.0 mWjOC 500 mW 6.67 mW/oC -65 to +100 °C 2-180 2N 1204,A SERIES (continued) ELECTRICAL CHARACTERISTICS (TA = 250 C unle
15	2N2369A	Motorola	Switching Transistors
16	2N297A	Motorola	PNP germanium power transistors e Ie = 0.5 Amp Emitter-Base Cutoff Current VEB = 40 Vde IC = 0 Collector"Base Cutoff Current VCB = 2 Vde IE = 0 Collector-Base Cutoff Current VeB = 60 Vde IE = 0 lEBO - leBO - leBO - Base Current VeE '" 2 Vdc Ie= 0.5 Adc Base Current VCE = 2 V
17	2N242	Motorola	PNP germanium power transistors = 20 mAdc) (lC = 1. 0 Adc, IB = 100 mAdc) DC Current Gain (VCE = 12 Vdc, IC = 500 mAdc) (VCE = 1 Vdc,.IC = 200 mAdc) Common Emitter Cutoff Frequency (VCE = 12 V. IC = 0.5 A) (VCE = 6 V. IC = 1 A) Power Gain (IC = 0.5 A. VCE = -14 V, RL = 301'l. Rg=10
18	2N2291	Motorola	PNP GERMANIUM POWER SWITCHING TRANSISTORS --=Z-~~.est Ad~!~0,.IB_=_~ -- ......_ _ _ .. _ _-,,31\o.01'v-_ _ _" 2-275 10 AMPERE PNP ADE GERMANIUM POWER TRANSISTORS 40 ·120 VOLTS 70 WATTS 1.171 rnf Collector Connected to Ceee CASE11A (TO ·3) Except Pin Diameter 2N2291 thru 2N2293 (continue
19	2N2192A	Motorola	NPN Transistor pF J7V Scope Input: = R 10 Megohms = C 11.5 pF 2-251 2N2192,A,B thru 2N2195,A,B (continued) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Collector-Base Breakdown Voltage (IC = 100 /lAde, IE = 0) 2N2192, A, B,
20	2N2152	Motorola	PNP germanium power transistors 75 Vdc VEB 25 30 40 Vdc IC 30 Adc PD 170 Watts 0.5 W/oC Operating Junction Temperature Range TJ -65 to + 110 °c THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case °JC 0.5 °C/W 2-24