| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Motorola Inc |
TMOS FET Transistor e (VGS = 0, ID = 100 µAdc) Zero Gate Voltage Drain Current (VDS = 48 Vdc, VGS = 0) (VDS = 48 Vdc, VGS = 0, TJ = 125°C) Gate –Body Leakage Current, Forward (VGSF = 30 Vdc, VDS = 0) V(BR)DSS IDSS — — IGSSF — 10 500 –100 nAdc 60 — Vdc µAdc ON CHARACTERI |
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Motorola Inc |
TMOS FET Transistor |
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Motorola Inc |
TMOS FET Transistor |
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Desde 2024. D4U Semiconductor.
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