| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Motorola Inc |
TMOS FET Transistor µA) Zero Gate Voltage Drain Current (VDS = 48 Vdc, VGS = 0) (VDS = 48 Vdc, VGS = 0, TA = 125°C) Gate –Body Leakage (VDS = 0, VGS = ±30 V) Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) On –State Drain Current(1) (VDS = VGS, ID = 1.0 mA) Drain –Source |
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Desde 2024. D4U Semiconductor.
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