| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Motorola Inc |
UHF POWER TRANSISTOR haracteristic Thermal Resistance, Junction to Case (1) at 70°C Case Symbol RθJC Max 7.0 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector –Emitter Breakdown |
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Motorola Inc |
UHF POWER TRANSISTOR NPN SILICON high impedances and is easy to match. • Motorola Advanced Amplifier Concept Package • Oxynitride Passivation • Specified 26 Volts, 960 MHz Characteristics Output Power = 45 Watts Minimum Gain = 8.0 dB Efficiency = 50% • Circuit board photomaster avai |
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Motorola Inc |
NPN SILICON UHF POWER TRANSISTOR 1) Collector –Emitter Breakdown Voltage (IC = 10 mA, RBE = 75 Ohms) Collector –Emitter Leakage (VCE = 26 V, RBE = 75 Ohms) Emitter –Base Breakdown Voltage (IC = 5.0 mAdc) Emitter –Base Leakage (VBE = 2.5 V) V(BR)CER ICER V(BR)EBO IEBO 40 — 3.5 — — — — — |
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Motorola Inc |
RF POWER TRANSISTOR input and output matching networks and high impedances. It can easily operate in a full 870 – 960 MHz bandwidth in a simple circuit. • Class AB Operation • Specified 26 Volts, 960 MHz Characteristics Output Power — 5 Watts Gain — 9 dB min Efficiency — |
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Motorola Inc |
UHF Power Transistor |
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Motorola Inc |
RF POWER TRANSISTOR THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) Symbol RθJC Max 3.3 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector –Emitte |
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Motorola Inc |
UHF LINEAR POWER TRANSISTOR S Collector –Emitter Breakdown Voltage (IC = 10 mA, RBE = 75 Ohms) Collector –Emitter Leakage (VCE = 26 V, RBE = 75 Ohms) Emitter –Base Breakdown Voltage (IC = 5.0 mAdc, IC = 0) Emitter –Base Leakage (VBE = 2.5 V) V(BR)CER ICER V(BR)EBO IEBO 40 — 3.5 — — |
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Desde 2024. D4U Semiconductor.
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